Solid Electrolyte Memory Protection Layer Against Electromagnetic Waves

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Solution Overview

Problem

Existing solid electrolyte memory devices face reproducibility issues during the back end of line process due to electromagnetic waves causing metal ions from the electrode layer to move into the solid electrolyte layer, leading to unpredictable changes in metallic material concentration.

Innovation Solution

A protection layer is implemented above the composite structure of a solid electrolyte memory device, comprising a solid electrolyte layer and an electrode layer, which absorbs or reflects electromagnetic waves, preventing metal ions from moving out of the electrode layer into the solid electrolyte layer. This protection layer is typically formed using SiH4 and/or N2 and has a thickness ranging from 20nm to 400nm, shielding the electrode layer and solid electrolyte layer from wavelengths of 150nm to 400nm, including ultraviolet light.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If electromagnetic waves are present during the back end of line process, then the process can proceed normally, but metal ions move from the electrode layer into the solid electrolyte layer causing unpredictable changes in metallic material concentration

Engineering Contradiction:

Improvereproducibility of fabricating methodVSAvoidconcentration of metallic material in solid electrolyte layer

Core Design Contradiction:

ReliabilityVSStability of the object's composition

Solution Approach 1:

A protection layer is introduced as an intermediary between the electromagnetic wave source and the solid electrolyte memory device. This protection layer absorbs or reflects electromagnetic waves, preventing them from causing metal ion migration while allowing the back end of line process to proceed normally. The protection layer thus mediates between the conflicting requirements of process continuation and composition stability.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The protection layer converts the harmful effect of electromagnetic waves into a beneficial shielding effect. By positioning the protection layer to absorb or reflect electromagnetic waves, the harmful radiation is transformed into a protective barrier that prevents metal ion migration, effectively turning the harmful electromagnetic energy into a useful protective function.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

2Device complexity

If no protection layer is used, then the device structure is simpler, but metal ion migration occurs leading to reproducibility issues

Engineering Contradiction:

Improvestructure of memory deviceVSAvoidreproducibility of fabricating method

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

The protection layer is applied in advance during the back end of line process, before any potential metal ion migration can occur. This preliminary protective measure ensures that when electromagnetic waves are present during subsequent processing steps, the metal ions are already shielded and cannot migrate into the solid electrolyte layer, thus ensuring reproducibility without significantly complicating the overall device structure.

Inventive Principle:

Principle #10Preliminary action

3Object-affected harmful factors

If the protection layer thickness is increased, then electromagnetic wave shielding is improved, but the device becomes more complex and fabrication becomes more difficult

Engineering Contradiction:

Improveelectromagnetic wave impact on metal ionsVSAvoidfabrication of protection layer

Core Design Contradiction:

Object-affected harmful factorsVSEase of manufacture

Solution Approach 1:

The protection layer thickness is optimized to a specific range (20nm to 400nm) that provides sufficient electromagnetic wave shielding while remaining compatible with standard thin film deposition techniques. This parameter optimization ensures that the protection layer is thin enough to be easily fabricated using existing manufacturing processes, yet thick enough to effectively block electromagnetic waves and prevent metal ion migration.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The protection layer effectively prevents metal ion migration during the back end of line process, enhancing the reproducibility of the fabricating method by maintaining the concentration of metallic material within the solid electrolyte layer, thereby stabilizing the memory device's performance.

Implementation Method 1

Methodology Applied

Scientific EffectAbsorption (EM radiation): Absorption (EM radiation)

Implementation Method 2

Methodology Applied

Scientific EffectReflection (EM radiation): Reflection

Data Source

PatentUS8178379B2Integrated circuit, resistivity changing memory device, memory module, and method of fabricating an integrated circuit

Publication Date: 2012.05.15 SAMSUNG ELECTRONICS CO LTD

AI summary

According to one embodiment of the present invention, a memory device includes a composite structure including a resistivity changing layer and an electrode layer being arranged on or above the resistivity changing layer. The resistivity changing memory device further includes a protection layer being arranged on or above the composite structure, the protection layer protecting the electrode layer against electromagnetic waves.