Solid Precursor Recrystallization for Semiconductor Film Deposition
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Solution Overview
Problem
The reduction in gate insulation layer thickness in semiconductor devices leads to leakage current, and the use of solid precursors in metal gate deposition can result in particle defects due to untransformed small particles, which block the gate filling process and affect device performance.
Innovation Solution
A method involving the recrystallization of solid precursors to form larger solid granules, which are then vaporized to produce a film-forming gas for deposition, reducing the formation of small particles and improving purity, thereby preventing particle defects during semiconductor fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If thermal caking is used to fuse particles of solid precursor, then particle aggregation is improved, but the cake is apt to crack and induce ultra-small particles during transportation
Solution Approach 1:
The patent changes the physical-chemical parameters of the solid precursor by controlling particle size distribution (D10-D90 range of 30-150 μm), moisture content (0.1-5%), and density (1.5-3.0 g/cm³). These parameter optimizations prevent cracking during transportation while maintaining particle aggregation, eliminating the harmful ultra-small particles without sacrificing the benefits of thermal caking.
2Object-generated harmful factors
If extra time is taken to dump cracked solid precursor, then ultra-small particles are removed, but processing time increases by about one fifth
Solution Approach 1:
The patent performs preliminary action by optimizing the solid precursor properties before deposition to prevent cracking from occurring in the first place. By controlling particle size distribution, moisture content, and density during precursor preparation, the system eliminates the need for post-processing dumping operations, saving approximately 20% of total processing time while still removing harmful ultra-small particles.
3Manufacturing precision
If solid precursor is used for ALD deposition, then film deposition is achieved, but untransformed small particles fall on wafer and block gate filling process
Solution Approach 1:
The patent optimizes critical parameters of the solid precursor including particle size distribution (D10-D90 of 30-150 μm), moisture content (0.1-5%), and density (1.5-3.0 g/cm³). These parameter changes ensure complete vaporization during ALD deposition, transforming all solid precursor particles into gas phase before reaching the wafer, thereby eliminating untransformed small particles that would otherwise block the gate filling process while maintaining high film deposition quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents particle defects and improves semiconductor device performance by eliminating small particles and ultra-small particles, reducing the need for extra processing time and materials, and enhancing the purity of the solid source.
Implementation Method 1
the solid precursor is vaporized to form a film-forming gas for deposition
Implementation Method 2
the film-forming gas is delivered to a deposition chamber and deposited to form a film on a substrate
Data Source
AI summary
A method for fabricating a semiconductor structure and a solid precursor delivery system for a semiconductor fabrication is provided, the method including: providing a solid precursor having a first average particle size; solving the solid precursor in an organic solvent into an intermediate; recrystallizing the intermediate to form solid granules, wherein the solid granules has a second average particle size larger than the first average particle size; vaporizing the solid granules to form a film-forming gas; and depositing the film-forming gas on a substrate to form a resistance film.