Solid-State Component with Band-Gap Alignment for High Open Terminal Voltage
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Solution Overview
Problem
Existing solid-state components face inefficiencies in electron transfer between electrodes due to energy barriers, limiting their performance in applications such as photovoltaic elements, photoelectric sensors, and electricity storage devices.
Innovation Solution
The component employs a cathode and an anode with a specific energy relationship (ΦK > ΦA) and a n-type semiconductor material with a band gap > 2.0 eV, combined with a coating material with a lower work function (ΦBM < ΦA) or negative electron affinity, allowing electron accumulation at interfaces, enabling efficient electron transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional semiconductor materials with smaller band gaps are used, then electron transfer efficiency is improved, but open terminal voltage decreases
Solution Approach 1:
The patent changes the key parameter of band gap energy by selecting a semiconductor material with Eg > 2.0 eV, which is larger than conventional materials. This parameter change simultaneously enables both high electron transfer efficiency and high open terminal voltage by creating favorable energy band alignment with the electrodes
Solution Approach 2:
The patent creates a composite structure consisting of a cathode, a semiconductor layer with specific band gap properties, and an anode with specific work function properties. This composite material system works together to achieve both efficient electron transfer and high voltage output
2Power
If semiconductor material with larger band gap is used, then open terminal voltage is improved, but electron transfer efficiency decreases
Solution Approach 1:
The patent optimizes the semiconductor material parameters by selecting a band gap in the specific range Eg > 2.0 eV and positioning the Fermi level appropriately. This precise parameter selection ensures that the larger band gap does not hinder electron transfer but rather enhances both voltage and efficiency through proper energy level alignment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves a continuous increase in open terminal voltage (Voc) and efficient electron flow, suitable for energy conversion and storage, even at room temperature and in the dark, with potential applications in (thermo)photovoltaic cells and energy storage devices.
Implementation Method 1
A solid-state component (1) comprises a cathode (K) from which electrons emerge and an anode (A) into which these electrons enter. Opposing surfaces of the cathode (K) and the anode (A) define an electrode gap (EZR). A semiconductor material (HL) and a coating material (BM) are located in the electrode gap (EZR).
Implementation Method 2
the work function of the coating material BM is smaller than the work function of the anode A (ΦBM < ΦA). There is electron-conducting contact between the cathode K, the n-type semiconductor material nHL, the coating material BM and the anode A
Data Source
Figure 1
Figure 2
AI summary
According to the invention, asymmetrical electrodes facing each other are electron-conductively connected to each other by means of a semiconductor material and a coating in such a way that an open terminal voltage Voc of 1.8 volts or even more is achieved by acting electromagnetic radiation.