Solid-State Single Crystal Connection via Combined Fixtures
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Solution Overview
Problem
Conventional methods for producing large-size semiconductor single crystals face challenges such as equipment complexity, reduced crucible strength, energy inefficiency, and the occurrence of defects like twinning and polycrystallization due to stringent temperature gradient requirements.
Innovation Solution
An apparatus comprising a hydrocooling furnace with a solid connection chamber and combined fixtures allows for the precise connection of small-size single crystals in solid states, using heating wires, vacuum tubes, and thermocouples to achieve high-precision and uniform physical characteristics, enabling the growth of larger-sized single crystals while avoiding twinning and polycrystallization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the size of the single crystal furnace is increased to produce larger semiconductor single crystals, then the size of the single crystal substrate is improved, but the equipment complexity and stability requirements are significantly worsened
Solution Approach 1:
The invention divides the single crystal production process into two separate stages: (1) growing multiple small-size single crystals in a conventional furnace, and (2) connecting these small crystals into a large-size single crystal through solid-state connection. This segmentation allows using standard equipment for crystal growth while achieving large substrate sizes through the connection process, thereby avoiding the need for oversized furnaces and associated complexity.
2Volume of moving object
If the crucible size is increased to accommodate larger single crystal growth, then the single crystal size is improved, but the crucible strength and temperature resistance are worsened
Solution Approach 1:
Instead of using one large crucible, the invention uses multiple small crucibles to grow individual small single crystals. These crystals are then connected outside the crucible through solid-state connection. This approach maintains crucible strength by keeping crucible sizes small while achieving large crystal sizes through post-growth connection.
3Productivity
If the temperature gradient is increased to improve single crystal growth, then the crystal growth rate is improved, but the occurrence of defects such as dislocations and twinning is worsened
Solution Approach 1:
The invention separates the crystal growth phase from the crystal size expansion phase. During growth, small crystals are formed with controlled temperature gradients to ensure high quality. Subsequently, these high-quality small crystals are connected to form large-size single crystals through solid-state connection, thereby achieving both high crystal quality and large size without the trade-off.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the connection of small single crystals into larger crystals with minimal defects, simplifies equipment requirements, and allows for the production of single crystals of any size, overcoming the limitations of conventional growth processes.
Implementation Method 1
A heating wire surrounding the solid connection chamber is provided in the hydrocooling furnace
Implementation Method 2
A vacuum tube is communicated with the solid connection chamber
Implementation Method 3
A thermocouple is provided close to the combined fixtures
Implementation Method 4
a hydrocooling furnace, a solid connection chamber hermetically disposed in the hydrocooling furnace
Data Source
AI summary
Disclosed is an apparatus for preparing a large-size single crystal, which relates to the field of semiconductor material preparation, and more particularly, to an apparatus for preparing a large-size single crystal from a plurality of small-size single crystals by connecting them in solid states. The apparatus includes a hydrocooling furnace, a solid connection chamber hermetically disposed in the hydrocooling furnace, and combined fixtures provided in the solid connection chamber, wherein a plurality of crystal pieces are fixed by the combined fixtures, a top column or a stress block is used for pressing the crystal piece through the combined fixtures, a heating wire surrounding the solid connection chamber is provided in the hydrocooling furnace, a vacuum tube is communicated with the solid connection chamber, and a thermocouple is disposed close to the combined fixtures. The present disclosure is advantageous in that: 1, single crystal pieces with a small size can be connected and prepared into a single crystal with a larger size, 2, in the preparation process, the problems in the conventional single crystal growth process, such as twinning and polycrystallization, can be excluded from consideration, 3, the equipment is simple, and 4, preparation of single crystals with any size is possible theoretically.