Solid-State Image Sensor Charge Transfer Layer for Vertical Transistors

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Solution Overview

Problem

The vertical transistor in solid-state image pickup devices experiences defects in signal electric charge transfer due to variations in the position of the gate electrode's bottom face, leading to yield issues.

Innovation Solution

Incorporating an electric charge transfer layer between the gate electrode and the photodiode in the semiconductor substrate to stabilize the transfer path, suppressing defects caused by variations in the gate electrode's position.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a vertical transistor is used to read signal electric charge from the photodiode, then the device integration and miniaturization are improved, but defects in charge transfer occur due to variations in gate electrode position

Engineering Contradiction:
Improvedevice integrationVSAvoidcharge transfer reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

An electric charge transfer layer is introduced as an intermediary component between the gate electrode and the photodiode. This transfer layer ensures reliable charge transfer even when the gate electrode position varies, by providing a dedicated path for charge carriers that is less sensitive to positional misalignment.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention addresses the positional variation problem (a positional tolerance issue in three dimensions) by introducing a fourth dimension - a temporal or sequential layer in the device structure. The charge transfer layer is positioned to accommodate variations in the vertical position of the gate electrode bottom face, effectively adding a degree of freedom to handle positional uncertainty.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Device complexity

If the gate electrode is embedded in the semiconductor substrate, then the device complexity is reduced, but manufacturing precision requirements increase due to position variations

Engineering Contradiction:
Improvetransistor structureVSAvoidgate electrode position
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The electric charge transfer layer acts as a cushioning element that compensates for manufacturing variations in gate electrode position. By providing an intermediate charge transfer path, it cushions against the effects of positional deviations, reducing the stringency of manufacturing precision requirements.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Adaptability or versatility

If multiple photodiodes are laminated in one pixel, then the spectroscopic characteristics are enhanced, but the charge transfer path becomes more complex

Engineering Contradiction:
Improvespectroscopic characteristicsVSAvoidcharge transfer path
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The electric charge transfer layer serves multiple functions: it facilitates charge transfer from multiple laminated photodiodes, accommodates positional variations of gate electrodes, and maintains reliable charge collection. This universal component simplifies the overall charge transfer path complexity by providing a common interface for multiple photodiodes.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The electric charge transfer layer stabilizes the transfer of signal electric charges, improving yield and reducing defects in the vertical transistor, while also enhancing spectroscopic characteristics of the photodiodes.

Implementation Method 1

a photodiode formed in the semiconductor substrate... the transistor being configured to read a signal electric charge from the photodiode via the gate electrode

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Data Source

PatentUS12453201B2Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus
Publication Date: 2025.10.21 SONY GROUP CORP
  • US12453201B2 patent drawing
  • US12453201B2 patent drawing
  • US12453201B2 patent drawing

AI summary

There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.