Solid-State Laser Annealing for Semiconductor Film Crystallization
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Solution Overview
Problem
The existing laser annealing methods for manufacturing semiconductor films face challenges in achieving high crystalline quality using solid-state lasers, which have poor maintainability and high running costs, while excimer lasers offer high crystalline quality but at the expense of high maintenance and costs.
Innovation Solution
A method employing a solid-state laser that replicates the pulse waveform of an excimer laser by using two pulsed laser beams with the second beam having lower intensity than the first, ensuring the semiconductor film is not completely melted, maintaining a state with uniform crystal grain size and high crystalline quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an excimer laser is used to crystallize an amorphous semiconductor film, then high crystalline quality is achieved, but running cost and maintenance cost increase
Solution Approach 1:
The patent applies the copying principle by replicating the excimer laser's pulse waveform characteristics using a solid-state laser. The invention creates a copy of the excimer laser's temporal intensity profile (high intensity first pulse followed by lower intensity second pulse) using affordable solid-state laser technology, thereby achieving the same crystallization effect without the high running costs of excimer lasers.
Solution Approach 2:
The patent applies parameter changes by modifying the temporal intensity parameters of the laser pulse. Specifically, it uses a two-pulse structure where the first pulse has higher intensity to initiate melting and the second pulse has lower intensity to control solidification, thereby achieving uniform crystal grain size and high crystalline quality while using cost-effective solid-state lasers.
2Loss of energy
If a solid-state laser is used to crystallize an amorphous semiconductor film, then running cost is reduced, but crystalline quality deteriorates
Solution Approach 1:
The patent applies periodic action by using a two-pulse laser irradiation sequence. The first pulse with higher intensity initiates the melting process, and the second pulse with lower intensity controls the solidification process. This periodic application of laser energy with specific timing and intensity ratios enables uniform crystallization and high crystalline quality using solid-state lasers.
Solution Approach 2:
The patent applies parameter changes by precisely controlling the temporal intensity parameters of the laser pulses. The first pulse uses higher intensity to achieve melting, while the second pulse uses lower intensity to control solidification rate, thereby achieving uniform crystal grain size and high crystalline quality that was previously only attainable with excimer lasers.
3Productivity
If a single high-intensity laser beam is used, then crystallization speed is improved, but crystal grain uniformity deteriorates
Solution Approach 1:
The patent applies segmentation by dividing the single laser irradiation into two separate pulses with different intensity levels. The first pulse handles the melting function and the second pulse handles the solidification control function. This segmentation allows each pulse to perform its specific function optimally, achieving both fast crystallization and uniform crystal grain size.
Solution Approach 2:
The patent applies periodic action through the two-pulse irradiation sequence. The first pulse provides high-intensity energy for rapid melting and the second pulse provides lower-intensity energy for controlled solidification. This periodic energy input with optimized timing achieves both high crystallization speed and uniform crystal grain morphology.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the crystalline quality of semiconductor films while improving maintainability and reducing running costs, making it suitable for semiconductor film manufacturing.
Implementation Method 1
an amorphous semiconductor film formed over a substrate is irradiated with a laser beam to be crystallized, so that a polycrystalline semiconductor film is formed
Implementation Method 2
an amorphous semiconductor film formed over a substrate is irradiated with a laser beam to be crystallized
Implementation Method 3
irradiating an amorphous semiconductor film with a first pulsed laser beam emitted from a solid-state laser, and irradiating the semiconductor film with a second pulsed laser beam emitted from a solid-state laser and including intensity lower than that of the first pulsed laser beam
Data Source
AI summary
A method for manufacturing a semiconductor film capable of forming a semiconductor film with high crystalline quality using a solid-state laser is provided. A method for manufacturing a semiconductor film according to the present disclosure includes the steps of (a) irradiating an amorphous semiconductor film with a first pulsed laser beam emitted from a solid-state laser, and then after the step (a), (b) irradiating the semiconductor film with a second pulsed laser beam including intensity lower than that of the first pulsed laser beam.