Solid-State Memory ECC Encoder Reduces Write Cycles

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Solution Overview

Problem

Solid-state memory devices, such as flash memory, experience slower write throughput compared to read throughput due to repeated write/read-verify operations, which can degrade storage capacity over time.

Innovation Solution

Implementing a powerful error correction code (ECC) encoder/decoder, such as Bose-Chaudhuri-Hocquenghem (BCH) coding, to correct errors within the data, allowing for reduced write/read-verify iterations and potentially eliminating the need for read-verify operations, thereby enhancing write throughput.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If repeated write/read-verify operations are performed to ensure data reliability, then data reliability is improved, but write throughput deteriorates

Engineering Contradiction:
Improvedata reliabilityVSAvoidwrite throughput
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies preliminary action by performing error correction coding during the write operation itself, rather than waiting for read-verify operations to detect and correct errors. The ECC encoder processes data before it is written to memory, and the ECC decoder is ready to immediately correct errors upon reading, eliminating the need for multiple iterative write/read-verify cycles and thereby improving write throughput while maintaining data reliability

Inventive Principle:
Principle #10Preliminary action

2Reliability

If multiple write operations are performed to correct errors, then data reliability is improved, but storage capacity degradation accelerates

Engineering Contradiction:
Improvedata reliabilityVSAvoidstorage capacity lifespan
Core Design Contradiction:
ReliabilityVSDuration of action of stationary object

Solution Approach 1:

The patent applies preliminary action by pre-calculating and storing ECC information alongside the data during the initial write operation. This allows errors to be corrected during subsequent read operations without requiring additional write operations, thereby reducing the number of programming cycles and slowing down storage capacity degradation while maintaining data reliability

Inventive Principle:
Principle #10Preliminary action

3Reliability

If read-verify operations are performed to detect errors, then data reliability is improved, but write throughput deteriorates

Engineering Contradiction:
Improvedata reliabilityVSAvoidwrite throughput
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies feedback by implementing a systematic error correction mechanism where the ECC decoder continuously monitors read operations and provides corrective feedback when errors are detected. The syndrome decoding process analyzes error patterns and generates correction information that is applied to the retrieved data, ensuring data reliability while minimizing the need for repeated write operations and thereby preserving write throughput

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS8583986B2Solid-state memory with error correction coding
Publication Date: 2013.11.12 SEAGATE TECH LLC
  • US8583986B2 patent drawing
  • US8583986B2 patent drawing
  • US8583986B2 patent drawing

AI summary

In a particular embodiment, a storage device is disclosed that includes a solid-state storage media. The storage device further includes a read/write circuit including an error correction coding (ECC) encoder/decoder adapted to write data and associated ECC information to the solid-state storage media without performing a read-verify operation.