Solid-State Particle Detector with Thin Back Electrode
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Solution Overview
Problem
Current particle detectors for thermal neutrons are bulky, sensitive to pressure and temperature changes, and face shortages of the He-3 isotope, making them inefficient and costly for large-area detection, especially in environments prone to radiation damage.
Innovation Solution
A solid-state particle detector design featuring a semiconductor junction with n-type and p-type layers, a thin back electrode layer for particle entry, and a neutron activation layer for charged particle generation, allowing for scalable, lightweight, and radiation-resistant detection of particles with energies from 0.5 MeV to 5 MeV.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If He-3 gas proportional counters are used for thermal neutron detection, then detection efficiency is improved, but device complexity and sensitivity to environmental changes increase
Solution Approach 1:
The patent replaces the mechanical/gas-based He-3 proportional counter system with a solid-state semiconductor detector system. The semiconductor detector uses an electric field to separate charge carriers generated by neutron interaction, eliminating the need for gas chambers, high voltage power supplies, and environmental control systems required by traditional proportional counters.
Solution Approach 2:
The patent changes the physical state of the detection medium from gaseous (He-3) to solid (semiconductor material). This parameter change enables the detector to operate in a more stable environment without sensitivity to pressure and temperature changes, while maintaining high detection efficiency through the solid-state material's inherent properties.
2Measurement precision
If scintillator detectors are used for particle detection, then detection capability is improved, but device complexity and sensitivity to gamma-ray background increase
Solution Approach 1:
The patent replaces the scintillator-based optical detection system with a direct electrical detection system using semiconductor detectors. Instead of converting particle energy to light and then to electrical signals, the semiconductor detector directly converts particle energy into electrical signals through charge carrier generation and collection, simplifying the detection chain and reducing gamma-ray background sensitivity.
3Measurement precision
If semiconductor detectors are used for particle detection, then detection precision is improved, but radiation damage sensitivity increases
Solution Approach 1:
The patent employs composite material structures including depleted uranium layers combined with semiconductor detectors, or neutron converter materials coupled with semiconductor sensors. These composite structures enhance the detector's ability to detect neutrons while the semiconductor component maintains radiation hardness through proper material selection and device design.
4Area of stationary object
If large-area detection is implemented using traditional detectors, then coverage area is improved, but device size and cost increase
Solution Approach 1:
The patent divides large-area detection into multiple smaller semiconductor detector elements that can be tiled or arranged in arrays. Each detector element is a compact solid-state device, and when combined, they provide large coverage area without requiring a single large complex detector, thus reducing overall system complexity and cost.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a compact, durable, and cost-effective means of detecting thermal neutrons with high efficiency, minimizing gamma radiation interference and enabling large-area scanning without the need for sealed gas chambers, thus enhancing security and applicability in various industries.
Implementation Method 1
When a particle enters the semiconductor junction, it generates electron-hole pairs in the depletion region and/or in the neutral region of the semiconductor junction.
Implementation Method 2
The electrons and holes are collected in the same semiconductor, usually by applying a strong external voltage to create an electric field in the semiconductor which separates the electrons and holes and sweeps them to the positive and negative electrodes.
Implementation Method 3
most neutron detectors need a separate neutron activation layer which includes a material that has a high concentration of an isotope with a large neutron cross-section. Such isotopes include He-3, Li-6, B-10, and Cd-113. These isotopes not only capture slow or thermal neutrons very well, but then emit high energy charged particles that are easier to detect.
Data Source
AI summary
A particle detector having a support member. A front electrode layer is disposed over the support member. A semiconductor junction having at least an n-type layer and at least a p-type layer is disposed over the front electrode layer. A back electrode layer is disposed over the semiconductor junction. The back electrode layer has a thickness which is selected to permit particles having energies in the range from about 0.5 MeV to about 5 MeV to enter the semiconductor junction.