Solution Deposition of Inorganic Thin Films for Electronic Devices
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Solution Overview
Problem
Current methods for producing inorganic electronic materials, such as silicon films, face challenges including low yield due to contamination, non-uniform deposition on rough substrates, and high manufacturing costs, while inkjet printing of inorganic materials is limited, with few examples and mostly focused on metal nanoparticle solutions rather than semiconducting channel materials.
Innovation Solution
A method for solution-based deposition of inorganic compounds using metal halides, metal carbonyls, and other inorganic compounds, which are dissolved in solvents and deposited onto substrates using techniques like inkjet printing, spin coating, or other methods, allowing for the formation of thin films without the need for multiple lithography steps and enabling the creation of metal oxides and other inorganic materials for electronic devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If CVD or sputtering methods are used to deposit silicon films, then functional inorganic electronic devices can be produced, but manufacturing costs become high due to multiple photolithography and vacuum deposition steps
Solution Approach 1:
The patent extracts and eliminates the complex vacuum deposition and multiple photolithography steps from the manufacturing process by using solution-based deposition methods that can be performed under ambient conditions, thereby reducing manufacturing complexity and cost
Solution Approach 2:
The patent replaces the mechanical vacuum deposition systems (CVD, sputtering) with chemical solution-based deposition methods, substituting complex mechanical/vacuum equipment with simpler solution processing techniques that achieve similar film formation
2Productivity
If CVD methods are used to deposit silicon films, then films can be formed, but yield becomes low due to apparatus contamination and side product formation
Solution Approach 1:
The patent uses disposable or easily replaceable solution-based deposition systems that do not require extensive cleaning and maintenance between runs, eliminating contamination accumulation issues that plague reusable vacuum deposition apparatus
Solution Approach 2:
The patent changes the deposition parameters from vacuum-based physical/chemical vapor deposition to solution-based deposition under ambient conditions, fundamentally altering the process environment to eliminate vacuum-related contamination and side reactions
3Manufacturing precision
If gaseous starting materials are used in CVD, then silicon films can be deposited, but uniform thickness cannot be achieved on substrates with rough surfaces
Solution Approach 1:
The patent changes the physical state of the starting material from gaseous (CVD) to liquid solution form, allowing the deposition process to conform to and uniformly coat rough substrate surfaces through capillary action and solution penetration
Solution Approach 2:
The patent introduces a liquid solvent as an intermediary carrier that enables uniform distribution of precursor materials across rough substrate surfaces, facilitating even film formation that gaseous precursors cannot achieve
4Productivity
If thermal CVD is used to deposit poly-silicon films, then films can be formed, but deposition rate becomes unacceptably slow
Solution Approach 1:
The patent changes the temperature parameter from high-temperature thermal CVD conditions to ambient or low-temperature solution deposition conditions, enabling rapid film formation without the slow kinetics inherent in thermal decomposition processes
Solution Approach 2:
The patent utilizes solution-to-film phase transition during deposition, allowing rapid material transfer and film formation at low temperatures, bypassing the slow solid-phase deposition kinetics of thermal CVD
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs, allows for large-area deposition, and eliminates the need for complex lithography processes, enabling efficient production of inorganic thin films for electronic devices with improved uniformity and productivity.
Implementation Method 1
The solvent is evaporated, or allowed to evaporate, to provide a layer comprising the inorganic compound
Data Source
AI summary
Disclosed embodiments concern solution deposition of at least a first inorganic compound on a substrate, typically for production of electronic devices, such as solution deposition of metal salts, including halides, carbonyls, acetates, sulfates, phosphates, carbonates, and mixtures thereof. Solutions may be deposited using any suitable process, particularly inkjet printing or spin coating. The method can involve depositing only a first solution, depositing a first solution plural times, or deposition of plural different solutions. Furthermore, the method may involve simultaneous or serial deposition of two or more solutions. The method may further comprise post deposition processing the deposited material, such as thermal annealing, oxidation processes, reduction processes, exchange reactions, and combinations thereof. Electronic devices that can be made by the method also are described, including transistors, circuits, capacitors, photovoltaics, photodetectors, such as a UV detector, gas sensors, batteries, X-ray imagers, light emitting diodes, solid electrolytes, computer readable media, and combinations thereof.