Solution-Based TFT Substrate Manufacturing Eliminates Vacuum
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Solution Overview
Problem
Conventional methods for manufacturing thin film transistors require high vacuum conditions, leading to high production costs due to the need for advanced equipment.
Innovation Solution
A manufacturing method involving the use of solution-based processes to form insulating and channel layers on a substrate, eliminating the need for high vacuum equipment, where HfAlOx and InZnOx solutions are used to create a thin film transistor substrate with a gate electrode, channel, and source/drain layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If physical vapor deposition, chemical vapor deposition, or atomic layer deposition methods are used to form thin film transistors, then the quality and performance of the thin film transistor substrate are improved, but the production cost increases due to the requirement of high vacuum conditions and advanced equipment
Solution Approach 1:
The patent replaces the mechanical vacuum system with a solution-based coating system. Instead of using physical vapor deposition, chemical vapor deposition, or atomic layer deposition that require high vacuum equipment, the invention uses solution coating methods (spin coating, dip coating, or spray coating) to deposit precursor solutions that are then converted to functional films through thermal treatment. This substitution eliminates the need for expensive vacuum equipment while maintaining film quality.
Solution Approach 2:
The patent changes the physical and chemical parameters of the deposition process. Rather than depositing materials in vacuum conditions with controlled vapor pressure and temperature, the invention uses liquid precursor solutions with controlled concentration, composition, and coating parameters. The subsequent thermal treatment converts these liquid precursors into functional inorganic films, effectively changing the deposition state from vapor-phase to liquid-phase processing.
2Manufacturing precision
If high vacuum equipment is used to manufacture thin film transistors, then the manufacturing precision and film quality are improved, but the device complexity and initial investment increase
Solution Approach 1:
The patent replaces complex vacuum equipment with simple solution coating equipment. The vacuum chamber, pumping systems, and associated control mechanisms are substituted with basic coating apparatus (spin coater, dip coater, or spray equipment) followed by a thermal treatment unit. This dramatically reduces device complexity while achieving comparable or superior film quality through solution-based processing.
Solution Approach 2:
The patent employs disposable or easily replaceable precursor solutions instead of requiring expensive, maintenance-intensive vacuum systems. The liquid precursors can be prepared in standard laboratories and applied using simple equipment, eliminating the need for costly vacuum chambers and pumping systems that require regular maintenance and have long lead times for replacement or repair.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces production costs by eliminating the requirement for high vacuum equipment while maintaining the integrity of the thin film transistor substrate, achieving cost-effective manufacturing without compromising the quality of the thin film transistor substrate.
Implementation Method 1
performing a first thermal treatment on the first semi-finished product, in which the first solution layer forms the insulating layer
Implementation Method 2
the first solution layer forms the insulating layer
Implementation Method 3
performing a second thermal treatment on the second semi-finished product, in which the second solution layer forms a channel formation layer
Implementation Method 4
the second solution layer forms a channel formation layer
Data Source
AI summary
A manufacturing method of a thin film transistor substrate and the thin film transistor substrate manufactured by using the manufacturing method are provided. The manufacturing method includes: providing a substrate layer, forming a gate electrode layer on the substrate layer, forming an insulating layer on the substrate layer and the gate electrode layer by using a first solution, forming a channel layer on the insulating layer by using a second solution, and forming a source/drain electrode layer on the insulating layer. The insulating layer and the channel layer are formed by processes using solution, so high vacuum equipment is not required, and production costs are reduced.