Semiconductor Solvent Processing with Immersion and High-Velocity Spray
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in efficiently and selectively removing organic materials such as photoresist, temporary bonding materials, and fluxes from substrates without damaging the substrates or requiring extensive processing, especially with the introduction of 3D packaging techniques that require chemistries incompatible with stainless steel.
Innovation Solution
A system and method utilizing an immersion station with a first fluid incompatible with stainless steel, followed by a high-velocity spray nozzle using a second fluid to remove organic materials, combined with solvent recycling and spin drying to ensure complete removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional wet processes are used to remove organic materials, then the process is gentle on substrates, but the removal efficiency is slow and requires extensive processing time
Solution Approach 1:
The patent changes the chemical parameters by using aggressive chemistries (oxygenated solvents, fluorinated solvents, or their mixtures) that are incompatible with stainless steel but highly effective at removing organic materials. This parameter change enables faster removal while maintaining substrate integrity through controlled chemical reactions.
Solution Approach 2:
The patent extracts the organic materials (photoresist, flux, temporary bonding materials) from the substrate surface using targeted chemical solvents. The process selectively removes these organic films through chemical dissolution and degradation, separating them from the substrate and underlying layers.
2Productivity
If aggressive processes are used to remove all organic films at once, then removal speed increases, but substrate damage risk increases
Solution Approach 1:
The patent applies different chemical properties to different organic materials through selective solvent choice. The aggressive chemistries are tailored to match the specific organic films present (photoresist, flux, bonding materials), creating localized chemical environments that optimize removal for each material type while minimizing collateral damage to the substrate.
Solution Approach 2:
The patent performs preliminary chemical conditioning by exposing the substrate to the aggressive chemistry before complete removal. This preliminary action softens and prepares the organic films for more complete removal, reducing the need for excessively aggressive subsequent processing that could damage the substrate.
3Adaptability or versatility
If stainless steel equipment is used for wet processing, then equipment compatibility is maintained, but chemistry selection is limited to stainless steel-compatible solvents
Solution Approach 1:
The patent introduces intermediary materials (non-stainless steel process chambers, containment vessels, and delivery systems) that mediate between the aggressive chemistries and the stainless steel equipment. These intermediaries protect the stainless steel from direct contact with incompatible solvents while allowing the chemistries to perform their function on the substrate.
Solution Approach 2:
The patent creates a non-stainless steel environment (through specialized process chambers and containment systems) that replicates the functionality needed for wet processing without requiring the substrate or core equipment to be made from incompatible materials. This copying approach allows use of aggressive chemistries while maintaining compatibility with existing manufacturing infrastructure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves faster and more efficient removal of organic materials, providing a pristine surface for bonding without substrate damage, while using chemistries that are not compatible with stainless steel, enhancing throughput and yield in semiconductor manufacturing.
Implementation Method 1
The substrate is immersed in a first fluid in an immersion station, wherein the first fluid is incompatible with stainless steel. The organic materials are removed from the surface of the substrate via the immersion of the substrate in the first fluid
Implementation Method 2
The substrate is then sprayed via a high-velocity spray nozzle with a second fluid in the process chamber
Implementation Method 3
The method further includes spin drying the one or more substrates to remove remnants of the second fluid from the surface of the substrate
Data Source
AI summary
A system and method for removing organic materials from a surface of a substrate are provided, where the organic materials can include photoresist, temporary bonding materials, adhesives, fluxes, and their respective residues. In the system and method, the substrate is immersed in a first fluid in an immersion station. The substrate is transported from the immersion station to a process chamber, where the substrate is sprayed via a high-velocity spray nozzle with a second fluid in the process chamber. The first fluid and the second fluid is incompatible with stainless steel, and the organic materials are removed from the surface of the substrate via the immersion of the substrate in the first fluid and the spraying of the substrate via the second fluid.