Voltage-Controlled SOT-MRAM via Ferroelectric Polarization
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Solution Overview
Problem
Conventional SOT-MRAM devices face challenges in achieving controllable magnetic moment flipping direction with high integration, requiring external magnetic fields that increase device complexity and hinder high-density semiconductor integration.
Innovation Solution
A magnetic random access storage unit is designed with a semiconductor substrate, ferroelectric thin film layer, and tunnel junction structure, allowing for controlled magnetic moment flipping through voltage application to the ferroelectric thin film layer without an external magnetic field, utilizing metal interconnection portions for data writing and reading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If an external magnetic field is applied to control the flipping direction of magnetic moment, then the flipping direction becomes controllable, but the device complexity increases and integration density decreases
Solution Approach 1:
The invention extracts and eliminates the external magnetic field component from the system. By removing the need for external magnetic field application, the device structure is simplified while maintaining controllable magnetic moment flipping through voltage-controlled magnetization switching in the ferroelectric thin film layer
Solution Approach 2:
The invention introduces a ferroelectric thin film layer as an intermediary between the voltage signal and the magnetic moment. This intermediary layer enables indirect control of magnetic moment flipping direction through voltage application, replacing the direct but complex external magnetic field control method
2Ease of operation
If an external magnetic field is applied to achieve directional flipping of magnetic moment, then the flipping direction becomes controllable, but the integration density of semiconductor storage device decreases
Solution Approach 1:
The invention merges the magnetic moment control function directly into the storage unit structure by integrating the ferroelectric thin film layer within the tunnel junction. This combination eliminates the need for separate external magnetic field generation components, thereby increasing integration density while maintaining directional control capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables high integration and miniaturization of SOT-MRAM devices with low power consumption, stable storage performance, and high reliability, suitable for mass production and industrialization, eliminating the need for external magnetic fields.
Implementation Method 1
applying a voltage is to a ferroelectric thin film layer and a bottom electrode thereon, so that the ferroelectric thin film layer is in a polarized state
Data Source
AI summary
The present disclosure provides a storage unit, a data writing method and a data reading method thereof, a memory and an electronic device. The storage unit includes a semiconductor substrate, a first insulating medium layer, a ferroelectric thin film layer, a bottom electrode, a tunnel junction, a first metal interconnection portion, a second metal interconnection portion, a third metal interconnection portion and a fourth metal interconnection portion. The first insulating medium layer is formed on the semiconductor substrate, the ferroelectric thin film layer is disposed on the first insulating medium layer, the bottom electrode is formed on the ferroelectric thin film layer, and the tunnel junction is formed on the bottom electrode. The first metal interconnection portion is connected to a first end of the bottom electrode, and the third metal interconnection portion is connected to a second end of the bottom electrode. The second metal interconnection portion is connected to the ferroelectric thin film layer, and the fourth metal interconnection portion is connected to the tunnel junction. As compared with the prior art, the present disclosure can control a directional flipping of the magnetic moment in the tunnel junction based on the ferroelectric thin film layer provided. Based on the structural design of the storage unit, the present disclosure does not require an external magnetic field, and fully meets the requirement of high integration of the device.