Spin-Orbit-Torque Element With Switching Layer Electrode
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The integration of spin-orbit-torque magnetoresistance effect elements is hindered by the need for three control elements, which increases the area required for each element and complicates integration, especially when multiple elements are used, due to the different current flow directions for writing and reading.
Innovation Solution
Incorporating switching layers in the electrodes of the spin-orbit-torque magnetization rotational element that can switch between high and low resistance states with a threshold voltage, allowing bidirectional current flow, reducing the need for external control elements and enhancing integration by varying the threshold voltage for writing and reading operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If three control elements are connected to each magnetoresistance effect element to control writing and reading operations, then the element can function properly, but the area required for one element is enlarged and integration is difficult
Solution Approach 1:
The patent merges the control element with the magnetoresistance effect element by integrating a switching layer into one of the electrodes. This switching layer can switch between high resistance state and low resistance state, thereby controlling the current flow for both writing and reading operations within the same structural footprint, eliminating the need for separate external control elements.
Solution Approach 2:
The electrode with the integrated switching layer serves multiple functions: it acts as both a control element (by switching resistance states to control current direction) and as an electrical contact for the magnetoresistance effect element. This multi-functionality reduces the number of separate components needed.
2Ease of operation
If current flows in the lamination direction for reading, then reading can be performed, but the writing current causes deterioration in characteristics of the magnetoresistance effect element
Solution Approach 1:
The patent introduces a switching layer with specific local properties (variable resistance) at a particular location within the electrode structure. This localized functional modification allows the system to control current flow direction and magnitude locally, enabling reading operations in the lamination direction while protecting the element from harmful writing currents through the switching layer's resistance control.
3Ease of manufacture
If current flows in a direction intersecting the lamination direction for writing, then magnetization reversal can be achieved, but the current flow direction differs from reading current flow direction
Solution Approach 1:
The switching layer within the electrode automatically controls the current flow direction based on its resistance state. When switched to low resistance state, it allows current to flow in the intersecting direction for writing; when in high resistance state, it directs current appropriately for reading. This self-controlling mechanism simplifies the overall system complexity despite the different current flow requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient data writing and reading while minimizing the number of control elements, thereby improving integration density and reducing the load on the magnetoresistance effect elements, allowing for more compact and efficient magnetic memory designs.
Implementation Method 1
at least one of the first electrode and the second electrode includes therein a switching layer configured to shift between a high resistance state and a low resistance state with a predetermined threshold voltage as a boundary to allow an electric current to flow bidirectionally
Implementation Method 2
The SOT is induced by a pure spin current caused by a spin-orbit interaction or Rashba effect at an interface of dissimilar materials
Implementation Method 3
The SOT is induced by a pure spin current caused by a spin-orbit interaction or Rashba effect at an interface of dissimilar materials
Implementation Method 4
A giant magnetoresistance (GMR) element that is configured by a multilayer film including a ferromagnetic layer and a nonmagnetic layer
Implementation Method 5
tunneling magnetoresistance (TMR) element that uses an insulating layer (a tunnel barrier layer, a barrier layer) as a nonmagnetic layer
Data Source
AI summary
A spin-orbit-torque magnetization rotational element includes: a spin-orbit-torque wiring extending in a first direction; a first ferromagnetic layer laminated on one surface of the spin-orbit-torque wiring; and a first electrode and a second electrode connected to the spin-orbit-torque wiring at positions sandwiching the first ferromagnetic layer in a plan view, wherein at least one of the first electrode and the second electrode includes therein a switching layer configured to shift between a high resistance state and a low resistance state with a predetermined threshold voltage as a boundary to allow an electric current to flow bidirectionally.