Source Contact Interface for SOI Body Charging Reduction
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Solution Overview
Problem
As semiconductor devices shrink, the use of lower energy band gap materials increases the risk of leakage current due to band-to-band tunneling and floating body effects, which can lead to adverse parasitic transistor openings and off-state leakages in silicon on insulator technology.
Innovation Solution
A source contact and channel interface is introduced to provide a dissipation path for minority carriers from the channel to the source contact, preventing charge buildup and mitigating floating body effects, thereby enhancing the performance of silicon on insulator devices, including nanowire/nanoribbon devices using lower band gap materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If lower energy band gap materials are used to reduce transistor turn-on energy, then energy efficiency is improved, but leakage current increases due to band-to-band tunneling
Solution Approach 1:
A dedicated dissipation path is introduced as an intermediary structure between the channel and source contact. This path includes a first region with lower doping concentration and a second region with higher doping concentration, forming a gradient that facilitates controlled carrier dissipation while blocking harmful leakage current
Solution Approach 2:
The dissipation path exhibits spatially varying doping concentrations, with the first region having lower doping and the second region having higher doping. This local quality variation creates optimal conditions for minority carrier dissipation at the interface while preventing bulk leakage
2Quantity of substance
If charge accumulates on the transistor body capacitor, then capacitance function is achieved, but floating body effects occur causing parasitic transistor opening and off-state leakage
Solution Approach 1:
The accumulated charge that would normally cause harmful floating body effects is redirected through the dissipation path. The gradient-doped structure converts the potentially harmful charge accumulation into a beneficial controlled dissipation mechanism, where minority carriers are efficiently removed through the first and second regions
Solution Approach 2:
The dissipation path acts as an intermediary mechanism between the channel and source contact, providing a controlled route for charge dissipation. This prevents uncontrolled charge buildup that leads to floating body effects while maintaining necessary charge storage function
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces body charging and prevents adverse floating body effects, enabling higher performance and reliability in semiconductor devices by providing a path for charge dissipation, thus improving the performance of silicon on insulator devices.
Implementation Method 1
leakage current as a result of band-to-band tunneling (BTBT)
Data Source
AI summary
An apparatus is provided which comprises: a source and a drain with a semiconductor body therebetween, the source, the drain, and the semiconductor body on an insulator, a buried structure between the semiconductor body and the insulator, and a source contact coupled with the source and the buried structure, the source contact comprising metal. Other embodiments are also disclosed and claimed.