Source-Coupled Stacked Transistor Package for Thermal Reliability

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Solution Overview

Problem

Packages with power semiconductor chips face reliability and performance issues due to significant heat generation during operation, which affects their thermal reliability and efficiency.

Innovation Solution

A package design featuring a vertical stack of two source-coupled transistor chips with mutual source coupling, which reduces heat generation and power loss, and allows for efficient heat removal through double-sided cooling and a compact design.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If power semiconductor chips are used to increase power output, then power capability is improved, but heat generation increases causing reliability deterioration

Engineering Contradiction:
Improvepower outputVSAvoidthermal reliability
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The invention divides the heat management function into multiple independent heat sinks positioned at different locations (top surface and side surfaces) of the package. This segmentation allows heat to be dissipated from multiple pathways simultaneously, reducing the thermal load on any single heat sink and improving overall thermal reliability while maintaining high power output capability.

Inventive Principle:
Principle #1Segmentation

2Power

If multiple transistor chips are stacked to increase power capability, then power output is improved, but device complexity increases

Engineering Contradiction:
Improvepower outputVSAvoidpackage structure complexity
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The invention merges multiple heat dissipation functions into a single integrated package structure. Multiple transistor chips are stacked vertically on a common substrate, with heat sinks integrated at the top and side surfaces. This merging approach achieves high power output through chip stacking while the unified package structure manages the complexity of heat dissipation, interconnections, and mechanical support in an integrated manner.

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If heat dissipation structures are added to improve thermal management, then thermal reliability is improved, but device complexity increases

Engineering Contradiction:
Improvethermal reliabilityVSAvoidpackage structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The package substrate serves multiple functions simultaneously: it provides mechanical support for the stacked transistor chips, establishes electrical interconnections between chips, and acts as a thermal management platform with integrated heat sinks at the top and side surfaces. This multi-functionality improves thermal reliability without proportionally increasing device complexity, as the same structural elements perform multiple roles.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The stacked source-coupled transistor chip package achieves low thermal resistance, high current gain, and enhanced heat spreading, improving thermal reliability and performance while maintaining a compact footprint suitable for power semiconductor applications.

Implementation Method 1

simulations have shown that stacked transistor chips with mutual source coupling are characterized by a low heat generation and in particular show a significantly lower power loss than a comparable design with drain coupling

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

stacked transistor chips with mutual source coupling are characterized by a low heat generation and in particular show a significantly lower power loss

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS12094807B2Stacked transistor chip package with source coupling
Publication Date: 2024.09.17 INFINEON TECHNOLOGIES AG
  • US12094807B2 patent drawing
  • US12094807B2 patent drawing
  • US12094807B2 patent drawing

AI summary

A package and method of manufacturing a package is disclosed. In one example, a package which comprises a first transistor chip having a first source pad and a second transistor chip having a second source pad and being stacked with the first transistor chip at an interface area. The first source pad and the second source pad are coupled at the interface area.