Source-Down Semiconductor Die with Integrated Sense Device
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor die packaging requires a dedicated sense pad for sensing source current or temperature, increasing package design complexity and cost due to the need for a separate die pad design during the die bond process.
Innovation Solution
A semiconductor die with a source-down configuration, where the source pad is attached to a die paddle, and a dedicated sense pad is provided on the opposite side, allowing a sense device to be electrically connected via a conductive via, reducing switching losses and static losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a dedicated sense pad is provided separate from the source pad at the front side of the transistor die, then sensing capability is improved, but package design complexity increases
Solution Approach 1:
The sense device is merged with the transistor device structure by forming the sense device within the drift region of the transistor, sharing the same physical space and manufacturing process. This integration eliminates the need for separate dedicated sense pads while maintaining sensing functionality.
Solution Approach 2:
The drift region of the transistor serves dual purposes: it acts as both the active switching region for current flow and as the sensing region for detecting source current or temperature. This multi-functionality reduces the need for separate dedicated sensing structures.
2Measurement precision
If a dedicated sense pad is provided separate from the source pad, then sensing capability is improved, but package cost increases
Solution Approach 1:
The sense device is merged with the transistor device structure by forming the sense device within the drift region of the transistor, sharing the same physical space and manufacturing process. This integration eliminates the need for separate dedicated sense pads while maintaining sensing functionality.
Solution Approach 2:
The drift region of the transistor serves dual purposes: it acts as both the active switching region for current flow and as the sensing region for detecting source current or temperature. This multi-functionality reduces the need for separate dedicated sensing structures.
3Loss of energy
If the source pad is attached to the die paddle in a source-down configuration, then switching losses are reduced, but the sensing connection becomes more complex
Solution Approach 1:
The sensing connection transitions from a planar front-side connection to a vertical through-die connection. The conductive via extends through the substrate to connect the sense device to the rear surface, utilizing the third dimension to simplify the overall package configuration while maintaining source-down orientation.
Solution Approach 2:
A conductive via acts as an intermediary element, providing the electrical connection path from the sense device in the drift region through the substrate to the rear surface contact. This intermediary structure enables the sensing function without interfering with the source-down configuration benefits.
Data Source
AI summary
A semiconductor die includes a semiconductor body, a transistor device disposed in the semiconductor body and having a gate, a source and a drain, and a sense device disposed in the semiconductor body and operable to sense a parameter associated with the transistor device. The die further includes a source pad at a first side of the semiconductor body and electrically connected to the source of the transistor device, a drain pad at a second side of the semiconductor body opposing the first side and electrically connected to the drain of the transistor device, and a sense pad at the second side of the semiconductor body and spaced apart from the drain pad. The sense pad is electrically connected to the sense device. A corresponding package and method of manufacturing are also disclosed.