Source Down Semiconductor Devices Heat Dissipation

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Solution Overview

Problem

Conventional semiconductor fabrication processes face challenges in efficiently dissipating heat from power devices, particularly when the voltage supported by these devices is high, as they rely on mechanical forces and lead frames that limit effective heat dissipation.

Innovation Solution

The implementation of a source down configuration where the source lead is directly mounted on the lead frame, utilizing a seed layer and diffusion barrier layer to modify the source contact area to encompass the entire substrate surface, allowing for improved heat dissipation by bringing the source lead closer to the heat sink, and using a ceramic carrier system for mechanical support during processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional fabrication processes are used with lead frames, then mechanical support is provided, but heat dissipation capability is limited

Engineering Contradiction:
Improveheat dissipation capabilityVSAvoidmechanical support structure
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent merges the mechanical support function and heat dissipation function into a single integrated ceramic carrier structure. The ceramic carrier simultaneously provides mechanical support for the semiconductor substrate during processing and serves as a heat sink for thermal management, eliminating the need for separate lead frame structures.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The ceramic carrier is designed to perform multiple functions: it provides mechanical support during fabrication, serves as a permanent mounting substrate, and acts as a heat dissipation pathway. This multi-functional design replaces the conventional lead frame's limited mechanical and electrical functions with a unified thermal-mechanical support system.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Temperature

If the source lead is mounted directly on the lead frame, then heat dissipation is improved, but mechanical stability during processing is reduced

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidmechanical stability
Core Design Contradiction:
TemperatureVSStability of the object's composition

Solution Approach 1:

The patent employs a composite structure where the ceramic carrier combines the thermal conductivity needed for heat dissipation with the mechanical strength required for processing stability. The ceramic material provides both the thermal pathway for heat sinking and the rigid support structure for mechanical stability during fabrication.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The ceramic carrier acts as an intermediary structure between the semiconductor substrate and the final packaging assembly. It provides a stable mounting platform that enables direct thermal coupling while maintaining mechanical stability throughout the fabrication process, serving as a permanent intermediate substrate.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Power

If thin semiconductor substrates are used, then device performance is improved, but mechanical support and stability are compromised

Engineering Contradiction:
Improvedevice performanceVSAvoidmechanical strength
Core Design Contradiction:
PowerVSStrength

Solution Approach 1:

The ceramic carrier is prepared in advance with appropriate mechanical and thermal properties before the semiconductor substrate is mounted. This preliminary preparation ensures that the thin substrate receives immediate and adequate mechanical support upon mounting, preventing damage during subsequent processing while maintaining its thin profile for performance.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS9911686B2Source down semiconductor devices and methods of formation thereof
Publication Date: 2018.03.06 INFINEON TECHNOLOGIES AG
  • US9911686B2 patent drawing
  • US9911686B2 patent drawing
  • US9911686B2 patent drawing

AI summary

A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. The method further includes forming a seed layer over the first side of the semiconductor substrate, and forming a patterned resist layer over the seed layer. A contact pad is formed over the seed layer within the patterned resist layer. The method further includes removing the patterned resist layer after forming the contact pad to expose a portion of the seed layer underlying the patterned resist layer, and forming a protective layer over the exposed portion of the seed layer.