Source Down Semiconductor Devices Heat Dissipation
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Solution Overview
Problem
Conventional semiconductor fabrication processes face challenges in efficiently dissipating heat from power devices, particularly when the voltage supported by these devices is high, as they rely on mechanical forces and lead frames that limit effective heat dissipation.
Innovation Solution
The implementation of a source down configuration where the source lead is directly mounted on the lead frame, utilizing a seed layer and diffusion barrier layer to modify the source contact area to encompass the entire substrate surface, allowing for improved heat dissipation by bringing the source lead closer to the heat sink, and using a ceramic carrier system for mechanical support during processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional fabrication processes are used with lead frames, then mechanical support is provided, but heat dissipation capability is limited
Solution Approach 1:
The patent merges the mechanical support function and heat dissipation function into a single integrated ceramic carrier structure. The ceramic carrier simultaneously provides mechanical support for the semiconductor substrate during processing and serves as a heat sink for thermal management, eliminating the need for separate lead frame structures.
Solution Approach 2:
The ceramic carrier is designed to perform multiple functions: it provides mechanical support during fabrication, serves as a permanent mounting substrate, and acts as a heat dissipation pathway. This multi-functional design replaces the conventional lead frame's limited mechanical and electrical functions with a unified thermal-mechanical support system.
2Temperature
If the source lead is mounted directly on the lead frame, then heat dissipation is improved, but mechanical stability during processing is reduced
Solution Approach 1:
The patent employs a composite structure where the ceramic carrier combines the thermal conductivity needed for heat dissipation with the mechanical strength required for processing stability. The ceramic material provides both the thermal pathway for heat sinking and the rigid support structure for mechanical stability during fabrication.
Solution Approach 2:
The ceramic carrier acts as an intermediary structure between the semiconductor substrate and the final packaging assembly. It provides a stable mounting platform that enables direct thermal coupling while maintaining mechanical stability throughout the fabrication process, serving as a permanent intermediate substrate.
3Power
If thin semiconductor substrates are used, then device performance is improved, but mechanical support and stability are compromised
Solution Approach 1:
The ceramic carrier is prepared in advance with appropriate mechanical and thermal properties before the semiconductor substrate is mounted. This preliminary preparation ensures that the thin substrate receives immediate and adequate mechanical support upon mounting, preventing damage during subsequent processing while maintaining its thin profile for performance.
Data Source
AI summary
A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. The method further includes forming a seed layer over the first side of the semiconductor substrate, and forming a patterned resist layer over the seed layer. A contact pad is formed over the seed layer within the patterned resist layer. The method further includes removing the patterned resist layer after forming the contact pad to expose a portion of the seed layer underlying the patterned resist layer, and forming a protective layer over the exposed portion of the seed layer.


