Source-Drain Contact Bridge Through Dielectric Wall for Dense Layouts
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As integrated circuits scale down, forming densely packed transistors with interconnect features becomes challenging due to limited spacing and the number of tracks in interconnect layers, making it difficult to connect transistor elements to signal tracks effectively.
Innovation Solution
The formation of conductive bridges between adjacent source or drain contacts within the device layer, extending through a dielectric wall that separates these regions and gate electrodes, allows for connections below or above interconnect layers, freeing up space for other interconnections and improving connectivity between transistor elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If transistors are packed more densely to scale down integrated circuits, then integration density is improved, but device spacing and interconnect track availability deteriorate
Solution Approach 1:
The patent introduces a conductive bridge that extends vertically through the gate electrode structure, utilizing the vertical dimension to create interconnect paths. This allows connections between source/drain contacts of adjacent transistors without requiring additional horizontal spacing, thereby maintaining high integration density while providing effective interconnect pathways in densely packed device layouts.
2Quantity of substance
If device spacing is reduced to increase transistor density, then integration density is improved, but the ability to form interconnect features deteriorates
Solution Approach 1:
By forming conductive bridges that extend vertically through the gate electrode, the patent creates interconnect pathways in the vertical dimension rather than requiring additional horizontal tracks. This approach simplifies interconnect feature formation in densely packed devices by utilizing the existing vertical structure (gate electrode) as a conduit for conductive material, eliminating the need for complex lateral routing in constrained spaces.
Solution Approach 2:
The gate electrode structure serves dual functions: it provides the standard gate control function for transistor operation and simultaneously serves as a conduit for the conductive bridge that enables interconnect between adjacent source/drain contacts. This multi-functionality reduces the need for separate interconnect structures, simplifying manufacturing in high-density configurations.
3Quantity of substance
If the number of interconnect tracks is limited due to dense packing, then integration density is improved, but connectivity between transistor elements deteriorates
Solution Approach 1:
The conductive bridge extends vertically through the gate electrode to connect source/drain contacts of adjacent transistors, creating interconnect pathways in the vertical dimension. This approach provides effective connectivity between transistor elements without requiring additional horizontal interconnect tracks, thereby maintaining connectivity capability while preserving high integration density in densely packed layouts.
Data Source
AI summary
Techniques are provided herein to form semiconductor devices that include a conductive bridge between topside contacts on adjacent source or drain regions. The conductive bridge extends through a dielectric wall that separates the adjacent source or drain regions. In an example, a first semiconductor device includes a first gate structure around or otherwise on a first semiconductor region (or channel region) that extends from a first source or drain region, and a second adjacent semiconductor device includes a second gate structure around or otherwise on a second semiconductor region that extends from a second source or drain region. A conductive bridge connects a first conductive contact on a top surface of the first source or drain region with a second conductive contact on a top surface of the adjacent second source or drain region through a dielectric wall that otherwise separates the conductive contacts.