Source/Drain Contact Isolation Layout for Smaller Semiconductor Cells
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Solution Overview
Problem
The scaling down of semiconductor devices for higher performance and lower power consumption leads to challenges in reducing the chip area and metal interconnects, which consume a significant portion of the semiconductor device's space.
Innovation Solution
The implementation of an isolation layer that separates the source/drain contact structure from the source/drain structure, allowing electrical connection through metal lines and vias without additional interconnects, thereby reducing the cell height and chip area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional metal interconnects are used to electrically connect source/drain structures, then electrical connectivity is improved, but chip area increases
Solution Approach 1:
The patent introduces an isolation layer as an intermediary element between the contact structure and source/drain structure. This isolation layer enables electrical connection through metal lines and vias without requiring additional dedicated interconnect structures, thereby reducing chip area while maintaining electrical connectivity
Solution Approach 2:
The isolation layer serves multiple functions simultaneously: it provides electrical isolation where needed, enables electrical connection paths through the metal line network, and reduces the need for separate interconnect structures. This multi-functionality eliminates additional interconnects and reduces overall chip area
2Speed
If device dimensions are scaled down for higher performance, then processing speed and power consumption are improved, but manufacturing complexity increases
Solution Approach 1:
The patent modifies the structural parameters of the semiconductor device by introducing an isolation layer with specific thickness and material properties. This parameter change enables scaled-down dimensions while maintaining manufacturability through controlled deposition and etching processes
3Area of stationary object
If cell height is reduced to minimize chip area, then chip area decreases, but electrical connection reliability may be compromised
Solution Approach 1:
The patent transitions from a planar connection approach to a three-dimensional structure by introducing the isolation layer that extends vertically. This allows electrical connections to be established through vias and metal lines in the vertical dimension, enabling reduced cell height while maintaining connection reliability
Data Source
AI summary
The present disclosure describes a semiconductor device having a contact structure isolated from a source/drain structure. The semiconductor structure includes a gate structure on a substrate, first and second source/drain (S/D) structures on opposite sides of the gate structure, an isolation layer on the second S/D structure, a third S/D structure adjacent to and separate from the second S/D structure, and a S/D contact structure on the isolation layer and the third S/D structure. The isolation layer separates the S/D contact structure from the second S/D structure.