Source/Drain Contact Liner Structure for Low-Capacitance Scaling
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Solution Overview
Problem
As semiconductor devices scale down, there is a need to reduce capacitance and ensure electrical stability between contacts, which existing technologies have not adequately addressed.
Innovation Solution
The semiconductor device incorporates a contact liner structure with a first and second contact liner, where the first contact liner includes a bottom portion and a vertical portion, and an etch stop layer, along with an interlayer insulating layer, to enhance contact stability and reduce capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the pitch size of the semiconductor device is reduced to increase device density, then the device density is improved, but the capacitance between contacts increases and electrical stability deteriorates
Solution Approach 1:
The patent introduces a contact liner structure as an intermediary layer between the source/drain contact and the surrounding environment. This contact liner acts as a mediator that provides electrical stability and controls capacitance effects, allowing the device to maintain reliability even as pitch size is reduced for higher density.
Solution Approach 2:
The contact liner structure extends in the vertical dimension (third direction) along the sidewall of the source/drain contact, rather than only in the horizontal plane. This vertical extension allows the contact liner to provide electrical stability and capacitance control without increasing the horizontal pitch, enabling density improvement while maintaining reliability.
2Productivity
If the pitch size of the semiconductor device is reduced to increase device density, then the device density is improved, but the capacitance between contacts increases
Solution Approach 1:
The contact liner structure serves as an intermediary that manages capacitance effects between contacts. By positioning this structure along the sidewall of the source/drain contact and extending vertically, it provides electrical stability while controlling parasitic capacitance, allowing reduced pitch sizes without excessive capacitance penalties.
Solution Approach 2:
The contact liner extends vertically in the third direction along the sidewall of the contact, utilizing the vertical dimension to provide capacitance control. This vertical orientation allows the contact liner to manage electric field distribution and reduce parasitic capacitance without requiring increased horizontal spacing between contacts.
Data Source
AI summary
Provided is a semiconductor device including an active pattern extended in a first direction, a plurality of gate structures including a gate electrode and a gate spacer disposed to be spaced apart from each other in the first direction on the active pattern and extended in a second direction, a source/drain pattern on the active pattern, a source/drain contact on the source/drain pattern, and a contact liner structure extended along a sidewall of the source/drain contact, being in contact with the sidewall of the source/drain contact. The contact liner structure includes a first contact liner and a second contact liner on the first contact liner. The first contact liner includes a first bottom portion, and a first vertical portion protruded from the first bottom portion and extended in a third direction. A lower surface of the contact liner structure is higher than an upper surface of the source/drain pattern.