Source/Drain Contact Layout Using Active Cut Overlap
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Solution Overview
Problem
Existing semiconductor devices face challenges in improving electrical characteristics, particularly in scaling technology where the width of the source/drain contact needs to be optimized to enhance performance.
Innovation Solution
The semiconductor device incorporates a design where the width of the source/drain contact is made relatively large, with a specific structure involving first and second active patterns, gate electrodes, active cut trenches, and layers that define the side walls and bottom surfaces of the active cut trench, allowing for improved electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the source/drain contact width is increased to improve electrical characteristics, then the electrical conductivity is improved, but the device area increases
Solution Approach 1:
The source/drain contact extends in the vertical direction by overlapping the first layer (etch stop layer) in the vertical direction. This vertical extension increases the effective contact area and electrical conductivity without proportionally increasing the horizontal device footprint, thus resolving the contradiction between electrical characteristics and device area.
Solution Approach 2:
The source/drain contact is positioned within the structure defined by the active cut trench and the first layer, utilizing the vertical space created by the etch stop layer. This nested arrangement allows the contact to achieve larger effective area for better electrical connection while being contained within the existing device structure boundaries.
2Reliability
If the source/drain contact width is increased to reduce contact resistance, then the electrical performance is improved, but the manufacturing complexity increases
Solution Approach 1:
The first layer (etch stop layer) is formed in advance during the active cut trench formation process, creating a pre-defined vertical structure that guides subsequent source/drain contact formation. This preliminary action simplifies the overall manufacturing process by establishing the vertical contact path early in the fabrication sequence.
Solution Approach 2:
The first layer (etch stop layer) acts as an intermediary structure that facilitates the formation of the source/drain contact. It provides a defined interface and vertical pathway that simplifies the contact formation process while ensuring proper electrical connection, thus reducing manufacturing complexity despite the increased contact dimensions.
Data Source
AI summary
A semiconductor includes a substrate, first and second active patterns that are on the substrate and extend in a first horizontal direction, a first gate electrode that is on the first active pattern and extends in a second horizontal direction, a second gate electrode that is on the second active pattern and extends in the second horizontal direction, an active cut trench that extends in the second horizontal direction and is between the first gate electrode and the second gate electrode, an active cut including a first layer and a second layer on the first layer, a first source/drain region that is between the first gate electrode and the active cut and is on the first active pattern, and a first source/drain contact that is on the first source/drain region, where at least a part of the first source/drain contact overlaps the first layer in a vertical direction.