Source/Drain Epitaxial Layer Structure for Short-Channel Suppression
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Solution Overview
Problem
The increasing demand for high-performance semiconductor devices with high integration density poses challenges in maintaining optimal operational properties, particularly in preventing short channel effects and ensuring effective electrical performance.
Innovation Solution
The semiconductor device incorporates a source/drain region with a plurality of first epitaxial layers and a second epitaxial layer, where the first epitaxial layers are spaced apart and include first impurities of a specific conductivity type, and the second epitaxial layer fills the space between them, including second impurities of a higher concentration, to prevent short channel effects and enhance electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integration density is increased to meet high performance demand, then device functionality and speed are improved, but short channel effects worsen and electrical performance deteriorates
Solution Approach 1:
The source/drain region is divided into multiple epitaxial layers with different impurity concentrations and conductivity types. The first epitaxial layers have a first conductivity type while the second epitaxial layer has a second conductivity type, creating local electrical property variations that control carrier flow and prevent short channel effects while maintaining high integration density
Solution Approach 2:
The source/drain region employs a composite structure of multiple epitaxial layers with different material properties. By combining layers with different conductivity types and impurity concentrations, the structure achieves both high integration density and effective short channel effect suppression, resolving the contradiction between device performance and electrical reliability
2Quantity of substance
If fine patterns with narrow widths and small spacing are used to increase integration density, then device capacity is improved, but manufacturing precision requirements increase and short channel effects worsen
Solution Approach 1:
The invention changes the electrical parameters of the source/drain region by introducing multiple epitaxial layers with different impurity concentrations and conductivity types. This parameter variation allows for effective electrical control in fine-patterning scenarios, enabling high integration density while maintaining manufacturing feasibility and electrical performance
3Reliability
If source/drain region impurity concentration is increased to improve electrical properties, then carrier mobility is improved, but short channel effects worsen due to increased impurity diffusion
Solution Approach 1:
The source/drain region is segmented into multiple epitaxial layers with different conductivity types and impurity concentrations. The first epitaxial layers contain first impurities while the second epitaxial layer contains second impurities, creating segmented impurity distribution that improves electrical properties while limiting harmful impurity diffusion that causes short channel effects
Solution Approach 2:
The second epitaxial layer acts as an intermediary between the first epitaxial layers, mediating the electrical properties and impurity distribution. This intermediate layer with different conductivity type controls the electrical characteristics while preventing direct impurity diffusion between adjacent regions, thereby improving electrical properties without exacerbating short channel effects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents short channel effects and improves the electrical properties of the semiconductor device by controlling impurity diffusion and concentration, thereby enhancing its operational performance.
Implementation Method 1
the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type
Data Source
AI summary
A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.