Source/Drain Separation Structure for Leakage Isolation
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Solution Overview
Problem
The increasing integration of semiconductor devices leads to difficulties in electrically separating elements, causing an increase in leakage current due to reduced spacing between source/drain regions.
Innovation Solution
A semiconductor device design featuring a separation structure with an insulating pattern and spacer layer, where the insulating pattern's uppermost end is farther from the substrate than the spacer layer's upper surface, effectively separating adjacent source/drain regions and reducing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high integration is implemented to increase device density, then productivity is improved, but leakage current increases due to reduced spacing between source/drain regions
Solution Approach 1:
The separation structure is divided into multiple segments: a first separation structure between adjacent first source/drain regions, a second separation structure between adjacent second source/drain regions, and a third separation structure between first and second source/drain regions. This segmented approach allows each separation structure to be optimized for its specific function, effectively reducing leakage current while maintaining high integration density.
Solution Approach 2:
Different separation structures are applied at different locations based on local requirements. The first and second separation structures use one material configuration, while the third separation structure uses a different material configuration. This local quality differentiation enables targeted leakage current reduction in critical areas without compromising overall device performance.
2Productivity
If spacing between source/drain regions is reduced to increase integration, then device density is improved, but electrical separation becomes more difficult
Solution Approach 1:
The separation structure extends in multiple dimensions: vertically with different heights (first separation structure has first height, second separation structure has second height different from first height), and horizontally with different material compositions. This multi-dimensional approach enables effective electrical separation even when horizontal spacing between source/drain regions is reduced for high integration.
Solution Approach 2:
The separation structure employs composite materials with different properties at different locations. The first and second separation structures use one material composition, while the third separation structure uses a different material composition. This composite material strategy enhances electrical separation effectiveness in high-density integration where spacing is minimized.
Data Source
AI summary
A semiconductor device includes a plurality of active regions on a substrate. A gate electrode is on, and intersects, the active regions. A plurality of source/drain regions are on the active regions, such that the source/drain regions are adjacent to opposite sides of the gate electrode and the gate electrode is between the source/drain regions. A separation structure is between adjacent source/drain regions. The separation structure includes an insulating pattern and a spacer layer. The insulating pattern includes first and second side surfaces that are opposite side surfaces of the insulating pattern and are adjacent to separate, respective source/drain regions. The spacer layer is on the first and second side surfaces. An uppermost end of the insulating pattern is farther from a lower surface of the substrate than a first upper surface of the spacer layer that is adjacent to the first and second side surfaces.