Binary Oxide Interface Layer for Low-Resistance Source-Drain Contacts
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving low contact resistance between semiconductor channel layers and source/drain terminals, which affects the overall performance of semiconductor devices.
Innovation Solution
The integration of a binary oxide layer between the semiconductor channel layer and source/drain terminals, formed through deposition processes like CVD or ALD, helps in reducing contact resistance and enhancing device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a binary oxide layer is integrated between the semiconductor channel layer and source/drain terminals, then contact resistance is reduced and device performance is improved, but device structure and manufacturing process become more complex
Solution Approach 1:
A binary oxide layer is introduced as an intermediary between the semiconductor channel layer and source/drain terminals. This intermediate layer serves as a mediator that facilitates better electrical contact by modulating surface characteristics, reducing contact resistance, and enabling lower operating voltages without directly modifying the channel layer or terminals themselves.
Solution Approach 2:
The patent employs binary oxide materials (such as TiO2, HfO2, Al2O3, or their combinations) as composite material layers between the semiconductor channel and metal terminals. These binary oxide materials provide optimized electrical and mechanical properties that neither pure semiconductor nor pure metal can achieve alone, creating a composite structure with superior contact characteristics.
2Reliability
If deposition processes like CVD or ALD are used to form the binary oxide layer, then contact resistance is reduced, but manufacturing process complexity increases
Solution Approach 1:
The binary oxide layer acts as a deposited intermediary material that can be applied using standard semiconductor fabrication techniques. By using CVD or ALD deposition processes, the intermediate layer is formed conformally on the channel surface, providing excellent contact properties without requiring complex post-processing or specialized manufacturing equipment.
Solution Approach 2:
The patent utilizes deposition process parameters (such as temperature, pressure, gas flow rates, and deposition thickness) to precisely control the properties of the binary oxide layer. By adjusting these parameters, optimal contact resistance is achieved while maintaining compatibility with existing manufacturing processes and enabling precise control over layer quality and electrical characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The binary oxide layer effectively lowers contact resistance and improves the performance of semiconductor devices by modulating surface characteristics and facilitating better electrical connections.
Implementation Method 1
The binary oxide layer effectively lowers contact resistance and improves the performance of semiconductor devices by modulating surface characteristics and facilitating better electrical connections.
Implementation Method 2
The integration of a binary oxide layer between the semiconductor channel layer and source/drain terminals, formed through deposition processes like CVD or ALD
Implementation Method 3
The integration of a binary oxide layer between the semiconductor channel layer and source/drain terminals, formed through deposition processes like CVD or ALD
Data Source
AI summary
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device has a semiconductor layer and a gate structure located on the semiconductor layer. The semiconductor device has source and drain terminals disposed on the semiconductor layer, and a binary oxide layer located between the semiconductor layer and the source and drain terminals.