Source/Drain Contact Plasma Deposition With Reduced Segregation
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Solution Overview
Problem
As semiconductor devices approach smaller feature sizes, such as the 5 nm and 3 nm process nodes, challenges arise in forming reliable source/drain contacts with minimal segregation and void formation, which affect the integration density and performance of electronic components.
Innovation Solution
A non-segregating process is employed to form source/drain contacts, involving the use of remote plasma treatment to remove base layers and prevent material segregation, combined with inductively coupled plasma and charge coupled plasma generation to deposit conductive materials, ensuring smooth and clean surfaces for further processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional contact formation processes are used at smaller feature sizes, then manufacturing simplicity is maintained, but material segregation and void formation increase, reducing contact reliability
Solution Approach 1:
A base layer is formed over the contact before depositing the conductive material. This preliminary action prevents material segregation and void formation during subsequent processing steps, ensuring contact reliability without requiring complex in-situ control mechanisms
Solution Approach 2:
The base layer acts as an intermediary between the contact and the conductive material. It provides a stable interface that prevents direct interaction between the contact material and overlying layers, eliminating segregation issues while maintaining a relatively simple overall process structure
2Productivity
If feature sizes are reduced to increase integration density, then more components can be integrated, but material segregation and void formation worsen, reducing yield
Solution Approach 1:
The base layer is formed in advance before conductive material deposition. This preliminary structure prevents segregation and void formation that typically occur at smaller feature sizes, enabling high integration density while maintaining contact quality and yield
Solution Approach 2:
The introduction of the base layer changes the physical and chemical parameters at the contact interface. This modification prevents material segregation during subsequent processing, allowing reliable contact formation even at reduced feature sizes required for high integration density
3Reliability
If base layer removal is performed to achieve clean contact surfaces, then interface quality improves, but material segregation increases
Solution Approach 1:
The base layer is selectively removed only from the contact region where electrical connection is needed, while being retained in other areas. This selective extraction provides clean contact surfaces for optimal interface quality without causing widespread material segregation
Solution Approach 2:
The base layer is removed locally at the contact interface rather than globally. This localized removal provides the clean surfaces needed for good electrical contact while preserving the base layer elsewhere to prevent material segregation in those regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the integration density and performance of semiconductor devices by reducing material segregation and void formation, leading to improved yield and interface quality between contacts and conductive layers.
Implementation Method 1
generating a plasma outside of the treatment chamber; introducing the plasma to the treatment chamber
Implementation Method 2
inductively coupled plasma
Implementation Method 3
charge coupled plasma generation to deposit conductive materials
Data Source
AI summary
A semiconductor device and method of manufacture are provided which utilize a remote plasma process which reduces or eliminates segregation of material. By reducing segregation of the material, overlying conductive material can be deposited on a smoother interface. By depositing on smoother interfaces, overall losses of the deposited material may be avoided, which improves the overall yield.