Source/Drain Epitaxy Using Plasma CVD for Abrupt Junctions
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Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing complex ICs due to increased complexity in processing and manufacturing, particularly in achieving efficient epitaxial growth for source/drain regions with existing methods.
Innovation Solution
A plasma-enhanced epitaxy method is employed using a CVD apparatus with a plasma source, allowing for the introduction of plasma-phase and gas-phase precursors to achieve epitaxial growth at lower substrate temperatures, improving dopant activation and junction abruptness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional epitaxial methods are used, then manufacturing process is simpler, but dopant activation and junction abruptness are insufficient
Solution Approach 1:
The patent employs plasma-enhanced chemical vapor deposition (PECVD) to perform epitaxial growth at lower substrate temperatures (700-900°C) compared to conventional high-temperature methods. This parameter change in temperature, enabled by plasma activation, improves dopant activation and junction abruptness while allowing for more precise control of the epitaxial growth process
Solution Approach 2:
The patent replaces conventional thermal epitaxial methods with plasma-enhanced epitaxial growth. The plasma source introduces reactive species that enable chemical reactions and material deposition at lower temperatures, substituting the purely thermal mechanism with a plasma-activated chemical process that achieves better dopant activation and junction characteristics
2Productivity
If high substrate temperature is used for epitaxial growth, then growth rate is faster, but strain relaxation increases
Solution Approach 1:
The patent changes the temperature parameter by using plasma enhancement to achieve epitaxial growth at lower substrate temperatures (700-900°C). This lower temperature regime reduces strain relaxation in the epitaxial layers while maintaining acceptable growth rates through plasma-activated reaction kinetics that compensate for the reduced thermal energy
3Manufacturing precision
If plasma-enhanced epitaxy is used, then dopant activation and junction abruptness improve, but process complexity increases
Solution Approach 1:
The patent employs a plasma source that serves multiple functions: it activates precursor gases for epitaxial growth, provides ion bombardment for improved dopant activation, and enables precise control of junction profiles. This multi-functionality consolidates several process steps into one, reducing overall process complexity despite the advanced plasma technology
Solution Approach 2:
The patent utilizes controllable plasma parameters (power, gas flow, pressure) to optimize epitaxial growth conditions. By adjusting these parameters, the process achieves improved dopant activation and junction abruptness while maintaining manageable process complexity through systematic parameter control rather than requiring multiple separate process steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient epitaxial growth with improved dopant activation and junction abruptness, reducing strain relaxation and allowing for anisotropic growth, thus enhancing the performance of semiconductor devices.
Implementation Method 1
introducing a plasma-phase precursor and a gas-phase precursor to the semiconductor substrate
Implementation Method 2
chemical vapor deposition apparatus for manufacturing a semiconductor device
Implementation Method 3
a heater surrounding the processing chamber
Data Source
AI summary
A method for manufacturing a semiconductor device is provided. The method includes etching a source/drain recess in a semiconductor substrate and performing an epitaxy process to form a source/drain epitaxial structure in the source/drain recess. The epitaxy process comprises a plurality of cycles, each of the cycles comprises depositing a semiconductor material by introducing a plasma-phase precursor and a gas-phase precursor to the semiconductor substrate.