Source/Drain Contact Formation Using Remote Plasma to Limit Segregation
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Solution Overview
Problem
As semiconductor devices approach smaller feature sizes, such as the 5 nm and 3 nm process nodes, challenges arise in forming reliable source/drain contacts with minimal segregation and void formation, which can impact device performance and yield.
Innovation Solution
A method involving the formation of source/drain regions using selective epitaxial growth and subsequent treatment with a remote plasma process to remove base layers, minimizing material segregation and voids, while depositing conductive materials like tungsten to ensure smooth interfaces and high-quality contacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional contact formation methods are used at small feature sizes, then manufacturing process is simpler, but material segregation and void formation increase
Solution Approach 1:
The patent applies preliminary action by performing remote plasma treatment on the contact structure before final conductive material deposition. This pre-treatment removes base layers and prevents material segregation, addressing potential quality issues before they occur during subsequent processing steps.
Solution Approach 2:
The patent introduces remote plasma as an intermediary treatment between contact formation and conductive material deposition. This intermediary process modifies the contact surface properties, preventing harmful material segregation and void formation without requiring direct contact with the conductive material deposition process.
2Productivity
If feature sizes are reduced to increase integration density, then more components fit in given area, but contact reliability deteriorates
Solution Approach 1:
The patent changes the physical-chemical parameters of the contact structure through remote plasma treatment. By modifying surface properties, composition, and structure at the nanoscale, the process maintains contact reliability even as feature sizes are reduced to increase integration density.
Solution Approach 2:
The patent applies local quality by performing targeted remote plasma treatment specifically on the contact regions. This localized treatment improves contact reliability where needed most, without affecting other device components, enabling continued scaling while maintaining performance.
3Ease of manufacture
If base layer is not removed, then processing steps are reduced, but material segregation increases
Solution Approach 1:
The patent replaces mechanical or chemical removal methods with remote plasma treatment. This substitution achieves base layer removal and material segregation prevention through plasma physics rather than mechanical etching or chemical reactions, simplifying the overall process while improving material uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the quality of source/drain contacts by reducing segregation and voids, leading to improved device performance and increased yield, particularly relevant for advanced process nodes like 5 nm and 3 nm.
Implementation Method 1
treating the contact with a remote plasma process to remove base layers
Implementation Method 2
formation of source/drain regions using selective epitaxial growth
Data Source
AI summary
A semiconductor device and method of manufacture are provided which utilize a remote plasma process which reduces or eliminates segregation of material. By reducing segregation of the material, overlying conductive material can be deposited on a smoother interface. By depositing on smoother interfaces, overall losses of the deposited material may be avoided, which improves the overall yield.