Source/Drain Thermal Conduction Layer for STI Heat Dissipation
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Solution Overview
Problem
Current semiconductor transistors face heat dissipation issues due to the poor thermal conductivity of silicon oxide materials at the source/drain region, leading to performance and reliability problems as heat generated by current flow or anneal processes cannot efficiently dissipate into the substrate.
Innovation Solution
Incorporating a thermal conductive layer with high thermal conductivity, such as BeO or AlN, at the source/drain region to facilitate efficient heat dissipation into the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon oxide material is used at the source/drain region, then electrical insulation is provided, but thermal conductivity is poor leading to heat dissipation issues
Solution Approach 1:
The isolation structure is segmented into multiple layers: a lower insulating layer (silicon oxide) providing electrical insulation, and an upper thermal conductive layer (silicon nitride or diamond-like carbon) providing heat dissipation. This segmentation allows each layer to perform its specialized function independently, resolving the contradiction between electrical insulation and thermal conductivity.
Solution Approach 2:
The isolation structure uses composite materials by combining silicon oxide (for insulation) with silicon nitride or diamond-like carbon (for thermal conduction). This composite approach allows the structure to simultaneously achieve both electrical insulation and effective heat dissipation, directly resolving the technical contradiction.
2Power
If heat is generated by source-to-drain current or anneal processes, then device operation is enabled, but heat dissipation efficiency is poor due to low thermal conductivity
Solution Approach 1:
The upper thermal conductive layer acts as an intermediary between the heat-generating source/drain region and the substrate. It facilitates efficient heat transfer from the hot region to the substrate, enabling device operation while improving heat dissipation efficiency by providing a thermal pathway through the isolation structure.
3Ease of manufacture
If conventional isolation structures are used, then manufacturing is simple, but heat management capability is insufficient
Solution Approach 1:
The thermal conductive layer is formed over the insulating layer during the isolation structure fabrication process, before subsequent device processing steps. This preliminary action ensures heat management capability is built into the structure early, while the overall process remains integrated with conventional manufacturing flows, maintaining ease of manufacture while improving heat management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The thermal conductive layer effectively dissipates heat generated by the source-to-drain current and anneal processes, enhancing the performance and reliability of semiconductor devices by improving heat management.
Implementation Method 1
the thermal conductive layer effectively dissipates heat generated by the source-to-drain current and anneal processes
Data Source
AI summary
A method of forming a semiconductor device includes forming a semiconductor strip extending above a semiconductor substrate, forming shallow trench isolation (STI) regions on opposite sides of the semiconductor strip, recessing a portion of the semiconductor strip, etching the STI regions to form a recess in the STI regions, forming a first thermal conductive layer in the recess, forming a source/drain epitaxy structure on the first thermal conductive layer, and forming a gate stack across the semiconductor strip and extending over the STI regions.