Source/Drain Trenches With Dielectric Strain Induction for Transistors
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Solution Overview
Problem
Current semiconductor technologies face challenges in reducing the size of structural features and inducing strain in source/drain regions, which limits performance and efficiency.
Innovation Solution
The formation of strain-inducing trenches in source/drain regions using epitaxial source/drain regions and dielectric layers, which enhances tensile or compressive strain depending on the type of transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional source/drain regions are used without strain induction, then the device structure is simpler, but transistor performance and efficiency are limited
Solution Approach 1:
The patent introduces strain into the source/drain regions by changing the physical state of the material through dielectric layer deposition, which induces mechanical stress that modifies carrier mobility and enhances transistor performance without fundamentally changing the device architecture
Solution Approach 2:
A dielectric layer is introduced as an intermediary element between the source and drain regions. This dielectric layer serves as a strain-inducing medium that transfers mechanical stress to the semiconductor material, improving carrier transport properties while maintaining structural simplicity
2Area of moving object
If the size of structural features is reduced for miniaturization, then chip area utilization increases, but strain induction capability is compromised
Solution Approach 1:
The patent applies strain induction locally to the source/drain regions through targeted dielectric layer deposition, allowing miniaturization of overall device dimensions while maintaining effective strain induction in the critical carrier transport paths where it is most needed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for increased performance and efficiency of transistors by inducing desired strains in the source/drain regions, thereby improving device performance.
Implementation Method 1
A strain inducing trench is formed in an epitaxial source/drain region and filled with a dielectric material to induce tensile strain in the epitaxial source/drain region
Data Source
AI summary
A semiconductor device comprises at least one epitaxial source/drain region, and a dielectric layer disposed in a trench in the at least one epitaxial source/drain region. The dielectric layer comprises one of a material with a negative coefficient of thermal expansion and a material with a positive coefficient of thermal expansion.