Source/Drain Thermal Conduction in Semiconductor Transistor Structures
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Solution Overview
Problem
Existing semiconductor transistors face challenges with heat dissipation due to the use of silicon oxide materials at the source/drain region, which have poor thermal conductivity, leading to performance and reliability issues.
Innovation Solution
Incorporating a thermal conductive layer with high thermal conductivity, such as BeO, AlN, or chemical vapor deposited diamond, at the source/drain region to efficiently dissipate heat generated by the source-to-drain current and anneal processes into the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If silicon oxide materials are used at the source/drain region, then the device structure is simple and easy to manufacture, but the thermal conductivity is poor leading to heat accumulation
Solution Approach 1:
The patent employs composite material structure by combining silicon oxide material with thermal conductive material in the source/drain region. The silicon oxide material maintains ease of manufacture and structural simplicity, while the thermal conductive material (such as diamond, cubic boron nitride, or graphite) provides enhanced thermal conductivity to dissipate heat effectively. This composite approach resolves the contradiction by integrating materials with complementary properties.
Solution Approach 2:
The patent applies local quality principle by selectively placing thermal conductive material at specific locations where heat generation is most intense - namely at the source/drain regions adjacent to the channel. The silicon oxide material is retained in areas where structural simplicity is prioritized, while thermal conductive material is introduced locally where heat dissipation is critical. This localized material differentiation optimizes both manufacturability and thermal management.
2Temperature
If thermal conductive material is added to improve heat dissipation, then the temperature control improves, but the device structure becomes more complex
Solution Approach 1:
The patent merges the thermal conductive material with the existing source/drain region structure, integrating heat dissipation functionality into the conventional device architecture. Rather than adding separate thermal management components, the thermal conductive material is combined with the source/drain regions during the fabrication process, allowing heat dissipation to occur through the existing device structure and reducing overall device complexity.
Solution Approach 2:
The thermal conductive material serves multiple functions simultaneously: it provides thermal conduction for heat dissipation, maintains structural integrity of the source/drain region, and can serve as part of the electrical conduction path. This multi-functionality reduces the need for additional separate components, thereby limiting the increase in device complexity while achieving improved temperature control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of a thermal conductive layer effectively enhances heat dissipation from the source/drain region into the substrate, improving the performance and reliability of semiconductor devices by preventing heat from accumulating in the channel.
Implementation Method 1
the thermal conductive layer with high thermal conductivity, such as BeO, AlN, or chemical vapor deposited diamond, at the source/drain region to efficiently dissipate heat generated by the source-to-drain current and anneal processes into the substrate
Data Source
AI summary
A method of forming a semiconductor device includes forming a semiconductor strip extending above a semiconductor substrate, forming shallow trench isolation (STI) regions on opposite sides of the semiconductor strip, recessing a portion of the semiconductor strip, etching the STI regions to form a recess in the STI regions, forming a first thermal conductive layer in the recess, forming a source/drain epitaxy structure on the first thermal conductive layer, and forming a gate stack across the semiconductor strip and extending over the STI regions.