Source Terminal Electrode Gap Structure for Stress and Humidity Resistance
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Solution Overview
Problem
Current semiconductor devices face challenges in reliability due to stress and humidity exposure, particularly with source terminal electrodes having large planar areas and thicknesses, which can lead to fluctuations in electrical characteristics and shape defects.
Innovation Solution
The semiconductor device incorporates a source terminal electrode with a gap portion and a sealing insulator, where the gap insulator is embedded in the source gap portions to protect the electrode from external forces and humidity, and the sealing insulator covers the periphery to prevent damage and corrosion, while the upper insulating film further shields the source electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the source terminal electrode has a large planar area and thickness, then the electrical conductivity is improved, but the stress resistance deteriorates and shape defects occur
Solution Approach 1:
The source terminal electrode is divided into multiple regions with different thicknesses. The center portion has a first thickness while the peripheral portion has a second thickness that is different from the first. This segmentation allows the electrode to maintain good electrical conductivity in the center while reducing stress concentration at the edges, thereby preventing shape defects and improving stress resistance.
2Reliability
If the source terminal electrode has a large planar area, then the electrical conductivity is improved, but the resistance to external forces and humidity deteriorates
Solution Approach 1:
The source terminal electrode is segmented into different thickness regions, with the peripheral portion having a reduced thickness compared to the center. This design reduces the exposure area to external forces and humidity while maintaining adequate electrical conductivity through the thicker center region, thereby improving resistance to harmful external factors.
Solution Approach 2:
The peripheral portion of the source terminal electrode is designed as a thinner film structure that is more flexible and less susceptible to external forces and humidity penetration. This thin film approach at the edges reduces the impact of environmental factors while the thicker center maintains electrical performance.
3Reliability
If the source terminal electrode thickness is increased, then the electrical conductivity is improved, but the manufacturing precision deteriorates due to shape defects
Solution Approach 1:
The electrode thickness is segmented into at least two different values across different regions. This segmentation prevents uniform thick electrodes from developing shape defects during manufacturing, as the varied thickness profile inherently reduces stress and deformation, thereby improving manufacturing precision while maintaining adequate conductivity.
Data Source
AI summary
A semiconductor device includes a chip having a main surface, a main surface electrode arranged on the main surface, and a terminal electrode that has a conductor layer covering the main surface electrode and a gap portion penetrating the conductor layer in a thickness direction as viewed in cross section, and that is fixed to a same potential as that of the main surface electrode.