Source Electrode Thickness Layout for Gate Insulator Heat Stress
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Solution Overview
Problem
In semiconductor devices, the low thermal conductivity of protective films leads to heat dissipation issues, causing temperature gradients that can compress and destroy the gate insulating film, especially during high-current states.
Innovation Solution
The semiconductor device design includes a source electrode with a thicker film thickness in areas covered by the protective film and a thinner film thickness in exposed areas, reducing heat generation and stress on the gate insulating film, and using materials with lower resistivity in certain parts to manage heat and stress effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protective film with low thermal conductivity is formed on the outer peripheral section to suppress creeping discharge, then electrical insulation and discharge suppression are improved, but heat dissipation deteriorates causing temperature gradients that compress and destroy the gate insulating film
Solution Approach 1:
The source electrode is designed with different film thicknesses in different regions: a first region under the protective film has a greater thickness than a second region in exposed areas. This local variation in thickness provides region-specific thermal management, allowing the thicker portion to compensate for the poor heat dissipation under the protective film while maintaining electrical insulation integrity.
2Ease of manufacture
If the source electrode has uniform thickness, then manufacturing is simplified, but heat generation and stress on the gate insulating film increase during high-current states
Solution Approach 1:
The source electrode transitions from uniform thickness to non-uniform thickness with a first region having greater thickness than a second region. This local quality variation optimizes heat dissipation in the protective film region while maintaining manufacturing feasibility through controlled deposition processes.
Solution Approach 2:
The film thickness parameter of the source electrode is varied spatially to optimize thermal performance. The thickness parameter changes from a constant value to a variable value, with the first region having a greater thickness than the second region, thereby adjusting thermal conductivity and heat generation characteristics in different areas.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces heat generation and stress on the gate insulating film, preventing its breakdown and maintaining device performance during high-current states.
Implementation Method 1
The protective film is made of a material having a lower thermal conductivity than that of the first electrode
Implementation Method 2
during high-current states
Data Source
AI summary
A semiconductor device includes a cell section having a plurality of gate structures, and an outer peripheral section surrounding the cell section. The cell section includes a semiconductor substrate, the plurality of gate structures, a first electrode and a second electrode. The cell section and the outer peripheral section includes a protective film made of a material having a thermal conductivity lower than that of the first electrode. The protective film extends from the outer peripheral section to an outer edge portion of the cell section adjacent to the outer peripheral section and covers a portion of the first electrode adjacent to the outer peripheral section.