Source Gas Pipe Layout for Stable Low-Vapor-Pressure Film Deposition

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Solution Overview

Problem

Existing film forming technologies face challenges in stably and efficiently transferring source gases with low vapor pressure, such as ruthenium carbonyl, to a process container due to flow disturbances and conductance issues in the gas supply pipes, which limits the high-flow rate supply of these gases.

Innovation Solution

A film forming apparatus is designed with a source container offset from the central axis of the process container, featuring a source gas supply pipe with a central axis alignment and a measurement system using a capacitance manometer and FTIR to control the flow rate, reducing flow disturbances and ensuring a uniform, high-flow rate supply of the source gas by adjusting valve openings based on measured flow rates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a conventional gas supply pipe configuration is used to transfer source gas from the source container to the process container, then the source gas can be supplied, but flow disturbances occur and the flow rate is limited due to conductance issues

Engineering Contradiction:
Improvesource gas flow rateVSAvoidflow stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The source container is positioned offset from the central axis of the process container, and the source gas supply pipe extends along the central axis. This spatial arrangement in a different dimensional configuration allows the source gas to flow smoothly along the central axis without being affected by the offset position of the source container, thereby eliminating flow disturbances and enabling stable high-flow rate supply.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Length of stationary object

If the source container is positioned on the central axis of the process container, then the gas supply path is shortened, but the source container cannot be properly connected to the offset gas supply pipe

Engineering Contradiction:
Improvegas supply pipe lengthVSAvoidconnection feasibility
Core Design Contradiction:
Length of stationary objectVSEase of manufacture

Solution Approach 1:

By positioning the source container offset from the central axis and having the gas supply pipe extend along the central axis, the design creates a three-dimensional spatial relationship that optimizes both connection feasibility and gas flow efficiency. This dimensional arrangement allows the pipe to reach the process container centrally while the source container remains at an offset position for proper connection.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Manufacturing precision

If a simple gas supply system without flow measurement is used, then the device complexity is reduced, but the flow rate control precision is insufficient

Engineering Contradiction:
Improveflow rate control precisionVSAvoidmeasurement and control system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The flow rate measurement device is incorporated into the source gas supply pipe to measure the flow rate of source gas in real-time. This measurement information is fed back to the control device, which adjusts the opening degree of the opening/closing valve to maintain the source gas flow rate within a predetermined range, achieving precise flow rate control through feedback mechanisms.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration allows for stable and accurate control of the source gas flow rate, enabling efficient deposition of ruthenium films by minimizing disturbances and maintaining high flow rates, thus improving the film forming process.

Implementation Method 1

a source container configured to receive and heat the low-vapor-pressure source

Methodology Applied
Scientific EffectVaporization: Evaporation

Implementation Method 2

a film forming apparatus for forming a film on a substrate by transferring a source gas generated from a low-vapor-pressure source to a process container by a carrier gas

Methodology Applied
Scientific EffectAdvection: Advection

Data Source

PatentUS11753720B2Film forming apparatus, source supply apparatus, and film forming method
Publication Date: 2023.09.12 TOKYO ELECTRON LTD
  • US11753720B2 patent drawing
  • US11753720B2 patent drawing
  • US11753720B2 patent drawing

AI summary

A film forming apparatus for forming a film on a substrate by transferring a source gas generated from a low-vapor-pressure source to a process container by a carrier gas includes: a source container configured to receive and heat the low-vapor-pressure source; a first gas pipe configured to supply the carrier gas to the source container; a second gas pipe connecting the source container and the process container; a first opening and closing valve provided in the second gas pipe; and a measurement part configured to measure a flow rate of the source gas flowing through the second gas pipe, wherein the second gas pipe is disposed on a central axis of the process container, and wherein the source container is offset with respect to the central axis of the process container.