Spacer Dielectric Oxidation for Lower Parasitic Capacitance
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Solution Overview
Problem
The reduction of structure and layer sizes in semiconductor devices leads to increased parasitic capacitance due to reduced dielectric material between conductive structures, resulting in current leakage, longer switching times, and increased processing errors.
Innovation Solution
Incorporating a dielectric layer with a tunable dielectric constant, achieved through an oxidation treatment process, between source/drain contact structures and gate structures to reduce parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If structure and layer sizes are reduced to increase transistor density, then device integration is improved, but parasitic capacitance increases due to reduced dielectric material between conductive structures
Solution Approach 1:
The patent applies parameter changes by treating the dielectric layer with oxidation to modify its dielectric constant. The dielectric layer transitions from an as-deposited state with higher dielectric constant to an oxidized state with reduced dielectric constant. This parameter change reduces parasitic capacitance between conductive structures while maintaining the reduced structure sizes necessary for high transistor density.
Solution Approach 2:
The patent applies local quality by creating spatial variation in dielectric properties. Different regions of the dielectric layer exhibit different dielectric constants based on their oxidation exposure. The dielectric constant is reduced in areas where parasitic capacitance is most problematic, while maintaining structural integrity and electrical isolation in other regions.
2Loss of time
If dielectric constant is reduced to minimize parasitic capacitance, then switching time is improved, but current leakage increases due to reduced insulating capability
Solution Approach 1:
The patent applies local quality by creating spatial variation in dielectric properties. Different regions of the dielectric layer exhibit different dielectric constants based on their oxidation exposure. The dielectric constant is reduced in areas where parasitic capacitance is most problematic, while maintaining structural integrity and electrical isolation in other regions.
Solution Approach 2:
The patent applies dynamics by creating a gradient in dielectric constant throughout the dielectric layer. The oxidation process creates a depth-dependent or region-dependent variation in dielectric properties, allowing the structure to dynamically balance between capacitance reduction and leakage prevention through spatially varying material properties.
3Object-generated harmful factors
If oxidation treatment is applied to reduce dielectric constant, then parasitic capacitance is reduced, but processing complexity increases due to additional treatment steps
Solution Approach 1:
The patent applies universality by designing the oxidation treatment process to serve multiple functions simultaneously. The oxidation step not only reduces the dielectric constant to minimize parasitic capacitance but also potentially performs other functions such as surface passivation, interface quality improvement, or compatibility with subsequent processing steps. This multi-functionality justifies the addition of the oxidation step in the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The oxidation treatment process initially maintains a high dielectric constant to withstand subsequent processing operations, and subsequently reduces the dielectric constant to minimize parasitic capacitance, resulting in shorter switching times, improved performance, and reduced processing errors.
Implementation Method 1
performing an oxidation treatment process to oxidize the dielectric layer, thereby reducing a dielectric constant of the dielectric layer
Data Source
AI summary
A semiconductor device may include one or more transistor structures that include a plurality of source/drain regions and a gate structure between the source/drain regions. The semiconductor device may further include one or more dielectric layers between a source/drain contact structure and a gate structure of the one or more of the transistor structures. The one or more dielectric layers may be manufactured using on oxidation treatment process to tune the dielectric constant of the one or more dielectric layers. The dielectric constant of the one or more dielectric layers may be tuned to reduce the parasitic capacitance between the source/drain contact structure and the gate structure (which are conductive structures). In particular, the dielectric constant of the one or more spacer dielectric may be tuned using the oxidation treatment process to lower the as-deposited dielectric constant of the one or more dielectric layers.