Spacer-Based Pattern Formation for Substrate Trenches
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Solution Overview
Problem
The existing methods for forming patterns in substrates, particularly in semiconductor manufacturing, face challenges in achieving precise line widths and spaces as devices miniaturize, leading to increased fabrication costs and complexity due to the need for additional masks and difficult mask layer fabrication for smaller line widths.
Innovation Solution
A method involving the formation of stripe-shaped mask layers with protrusion portions on a substrate, followed by the creation of a spacer with a specific thickness, which acts as a mask for etching, allowing for the formation of trenches without the need for additional masks to define cut patterns, thereby reducing fabrication steps and costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a traditional single patterning method is used, then the fabrication process is simple, but it cannot achieve the required line width and space ratios for miniaturized devices
Solution Approach 1:
The patent applies segmentation by dividing the patterning process into two stages: first forming a patterned mask layer with a 1:3 line width to space ratio, then forming spacers on the sidewalls to create the final 1:1 conductive pattern. This segmentations allows each stage to optimize for its specific function, achieving precise dimensional control without requiring complex single-step patterning
Solution Approach 2:
The patent transitions from two-dimensional planar patterning to three-dimensional sidewall spacer formation. By depositing spacer material on the vertical sidewalls of the patterned mask layer, the process exploits the third dimension (height) to define the horizontal pattern dimensions, enabling precise line width control that is insensitive to lithographic limitations
2Manufacturing precision
If additional mask layers are added to create cut patterns, then the desired conductive pattern can be achieved, but the fabrication cost and process complexity increase
Solution Approach 1:
The patent applies self-service by designing the spacer formation process to automatically define the cut pattern locations. The spacers form conformally on the sidewalls of the patterned mask layer, and their thickness naturally determines the trench dimensions. This self-aligned approach eliminates the need for separate alignment and patterning steps that would be required for additional masks, reducing both cost and complexity while maintaining precise pattern accuracy
3Manufacturing precision
If additional mask layers are added to create cut patterns, then the desired conductive pattern can be achieved, but the fabrication process becomes more complex
Solution Approach 1:
The patent merges the spacer formation function with the cut pattern definition function. The same spacer layer that defines the trench width also defines the cut pattern locations through its sidewall positioning. This consolidation of functions into a single process step eliminates the need for separate mask layers and alignment procedures, significantly reducing fabrication process complexity while maintaining precise pattern accuracy
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method efficiently forms patterns with required cut features without additional masks, reducing fabrication complexity and costs while maintaining precise control over line widths and spaces, facilitating the creation of conductive patterns with reduced etching rates and simplified processes.
Implementation Method 1
a spacer is formed on sidewalls of the stripe-shaped mask layers
Implementation Method 2
an etching process is performed by using the spacer as a mask to form trenches in the substrate
Data Source
AI summary
A method of forming a pattern in a substrate is provided, in which the substrate having a pattern region is provided first. A plurality of stripe-shaped mask layers is formed on the substrate in the pattern region. Each of at least two adjacent stripe-shaped mask layers among the stripe-shaped mask layers has a protrusion portion and the protrusion portions face to each other. A spacer is formed on sidewalls of the stripe-shaped mask layers, wherein a thickness of the spacer is greater than a half of a distance between two of the protrusion portions. Subsequently, the stripe-shaped mask layers are removed. An etching process is performed by using the spacer as a mask to form trenches in the substrate. Thereafter, the trenches are filled with a material.