Spacer Self-Aligned Quadruple Patterning Line Layout
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Solution Overview
Problem
The spacer self-aligned quadruple patterning process often results in improper electrical connections due to small spacing between line ends, which is exacerbated by the need for multiple lithography and etching processes, increasing production costs and complexity.
Innovation Solution
A method involving the formation of core layers with end layers and spacers, followed by the creation of auxiliary patterns in an I-beam shape to increase spacing between line ends, using fewer lithography processes, and a stack structure with pattern receiver layers to form desired line layouts with loop structures and connection portions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If spacer self-aligned quadruple patterning is performed to reduce spacing, then line pitch is reduced to half, but spacing between line ends becomes too small causing improper electrical connection
Solution Approach 1:
The patent segments the patterning process into multiple stages with different objectives: first SADP for overall pitch reduction, then selective removal of spacers at line end regions to create larger spacing. This segmentation allows simultaneous achievement of small pitch and adequate end spacing for electrical connection
Solution Approach 2:
The patent applies different treatments to different regions: full spacer retention in middle regions for tight pitch, and selective spacer removal at line end regions for adequate spacing. This local differentiation resolves the contradiction between overall pitch reduction and local electrical connection requirements
2Reliability
If multiple lithography and etching processes are performed to increase spacing between line ends, then electrical connection is improved, but production cost and fabrication complexity increase
Solution Approach 1:
The patent merges the spacing adjustment function into the existing SADP process by adding selective spacer removal steps, rather than introducing separate lithography processes. This combining approach improves electrical connection while minimizing additional fabrication complexity
Solution Approach 2:
The patent uses the spacers themselves as the mechanism for controlling spacing - by selectively removing them, the structure self-adjusts its spacing characteristics without requiring external patterning processes. This self-service approach reduces fabrication complexity
Data Source
AI summary
A line layout method includes: forming i core layers each including a main layer that extends in a first direction and has a first end and a second end, and an end layer that is connected with the first end of the main layer and protrudes in a second direction; forming a first spacer on a sidewall of the core layer; removing the core layers; and forming 2i auxiliary patterns. i is an integer equal to or greater than 1. The auxiliary patterns extend in the first direction and are spaced and arranged in the first direction. In a region corresponding to the end layer, a portion not overlapping the auxiliary patterns has an I-beam shape.