Spacer-Wafer High-Bandwidth Module for Multi-Die Signal Integrity
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Solution Overview
Problem
The increasing complexity and size of semiconductor dies lead to higher defect densities and yield loss, particularly in high-power applications like AI, where thermal interface degradation and signal integrity issues are exacerbated by multiple dies on a single module, and existing solutions like silicon interposers face challenges with signal integrity, power delivery, and supply chain issues.
Innovation Solution
A high bandwidth module structure and process that uses a spacer-chip assembly with semiconductor dies secured to a spacer wafer via electrical interconnect pillars, which are then attached to a substrate, eliminating the need for through silicon vias and enabling direct communication between dies with silicon-based wiring, allowing for multiple dies and varied technologies on a single substrate without signal cross-talk and with enhanced thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If semiconductor dies are grown larger to reduce complexity, then fewer dies are needed on a module, but defect density increases and yield decreases
Solution Approach 1:
The patent divides a large die into multiple smaller dies, each fabricated separately on the wafer to maintain low defect density and high yield. These smaller dies are then integrated onto a single module using an interposer substrate, achieving the functionality of a large die while preserving manufacturing reliability.
2Productivity
If more I/O connections are added to communicate between chips at fast rates, then communication bandwidth increases, but thermal issues and signal integrity problems worsen
Solution Approach 1:
The patent introduces an interposer substrate as an intermediary between multiple chips, providing a dedicated platform for high-density I/O connections. The interposer manages signal routing and thermal dissipation, enabling high-bandwidth communication while mitigating signal integrity degradation and thermal issues that would occur with direct chip-to-chip connections.
3Ease of operation
If through silicon vias (TSV) are used for interconnect, then vertical electrical connection is achieved, but signal cross-talk and manufacturing complexity increase
Solution Approach 1:
The patent extracts the vertical interconnection function from the silicon die itself and relocates it to the interposer substrate. By taking out the TSV requirement from the die design, the patent eliminates signal cross-talk concerns within the die and reduces manufacturing complexity, as the interposer provides the vertical electrical connections without requiring TSV fabrication processes in the silicon dies.
4Adaptability or versatility
If multiple dies of multiple types are integrated on a single module, then functionality and versatility increase, but thermal interface degradation and bond line uniformity issues worsen
Solution Approach 1:
The patent employs a universal interposer substrate that can interface with multiple different types of semiconductor dies. The interposer provides standardized connection interfaces and thermal management capabilities that work across diverse die types, enabling functional versatility while maintaining uniform bond lines and reliable thermal interfaces through the standardized interposer platform.
Data Source
AI summary
A module includes a substrate having a plurality of contact regions, and a spacer-chip assembly. The spacer-chip assembly in turn includes at least first and second semiconductor dies, each having a plurality of electrical interconnect pillars and a plurality of contact pads, and a spacer wafer. The at least first and second semiconductor dies are secured to the spacer wafer, and the spacer wafer includes at least first and second semiconductor circuit features coupled to a first portion of the contact pads of the at least first and second semiconductor dies. The spacer wafer includes wiring electrically coupling the at least first and second semiconductor dies via a second portion of the contact pads. The spacer wafer has a plurality of holes formed therethrough. The plurality of electrical interconnect pillars extend through the holes and are secured to the contact regions on the substrate.