SPAD Array Bragg Mirror Crosstalk Elimination

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Solution Overview

Problem

Conventional single-photon-avalanche diode (SPAD) arrays suffer from electro-optical crosstalk, where parasitic light from one SPAD can deactivate adjacent SPADs, reducing their detection performance due to the need for recharging, which decreases the overall array efficiency.

Innovation Solution

Incorporating a Bragg mirror between adjacent SPADs to prevent the propagation of parasitic light, allowing both SPADs to operate simultaneously without deactivation, while maintaining a high excess bias voltage by reflecting or absorbing the incident parasitic light emitted during avalanches.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-generated harmful factors

If the excess bias voltage of SPADs is decreased to attenuate crosstalk, then the number of hot carriers generated during avalanche is reduced, but the detection performance of SPADs deteriorates

Engineering Contradiction:
ImprovecrosstalkVSAvoiddetection performance
Core Design Contradiction:
Object-generated harmful factorsVSReliability

Solution Approach 1:

A Bragg mirror is introduced as an intermediary component between adjacent SPADs to reflect parasitic light and prevent crosstalk, allowing the excess bias voltage to be maintained at high levels for optimal detection performance without compromising array reliability

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent segments the silicon substrate by introducing Bragg mirrors between individual SPADs, creating optical isolation zones that prevent light propagation between adjacent diodes while maintaining electrical connectivity and detection performance

Inventive Principle:
Principle #1Segmentation

2Measurement precision

If a high reverse bias voltage is applied to generate sufficient electric field for avalanche, then single photon detection capability is improved, but parasitic light emission from hot carriers increases

Engineering Contradiction:
Improvesingle photon detection capabilityVSAvoidparasitic light emission
Core Design Contradiction:
Measurement precisionVSObject-generated harmful factors

Solution Approach 1:

The Bragg mirror converts the harmful parasitic light emission into a reflected signal that remains confined to the originating SPAD, allowing high reverse bias voltages to be maintained for excellent single photon detection while the parasitic light is redirected back rather than propagating to adjacent diodes

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The Bragg mirror effectively eliminates crosstalk, enabling all SPADs in the array to operate continuously without recharging, thus maintaining high performance and detection efficiency.

Implementation Method 1

The Bragg mirror is suitable for preventing a propagation of light between these two diodes

Methodology Applied
Scientific EffectReflection: Reflection

Implementation Method 2

At least one Bragg mirror is positioned between the at least two adjacent diodes, respectively

Methodology Applied
Scientific EffectBragg diffraction: Bragg Diffraction

Implementation Method 3

The initiating charge carrier may be generated photoelectrically by a single incident photon striking the region of high field

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 4

SPADs are reverse biased beyond their breakdown voltage. A high reverse bias voltage generates a sufficiently high electric field for a single charge carrier introduced into a depletion region of the SPAD to be able to cause an avalanche that is self-sustained via one ionization per impact

Methodology Applied
Scientific EffectAvalanche breakdown: Avalanche Breakdown

Implementation Method 5

During the avalanche in a SPAD, a high number of hot carriers are generated. These hot carriers relax by emitting parasitic light in the red or in the near infrared in all directions

Methodology Applied
Scientific EffectLight emission from hot carriers: Luminescence

Data Source

PatentUS11621363B2Integrated circuit comprising a single photon-based avalanche diode array and method for manufacturing such integrated circuit
Publication Date: 2023.04.04 STMICROELECTRONICS (CROLLES 2) SAS
  • US11621363B2 patent drawing
  • US11621363B2 patent drawing
  • US11621363B2 patent drawing

AI summary

An integrated circuit is formed in a semiconductor substrate. An array of single-photon-avalanche diodes is formed at a front side of the semiconductor substrate. The array includes first and second diodes that are adjacent to each other. A Bragg mirror is positioned between the first and second diodes. The Bragg mirror is configured to prevent a propagation of light between the first and second diodes.