Span Mask Generation via Memory Array Sensing Circuitry
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Solution Overview
Problem
Existing methods for generating span masks in semiconductor memory systems require significant computational time and power consumption, often necessitating data transfer between memory arrays and processing resources via buses, which can be inefficient and costly in terms of processing performance and energy usage.
Innovation Solution
The implementation of sensing circuitry within the memory array to generate span masks in parallel, reducing the need for data transfer by performing operations directly within the memory array, thereby minimizing computational time and power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If span masks are generated using external processing resources, then computational accuracy is maintained, but processing time and power consumption increase significantly
Solution Approach 1:
The patent combines the span mask generation function with the memory array by integrating sensing circuitry directly into the memory structure. This merging allows the memory array to perform computational operations (span mask generation) internally rather than transferring data to external processing resources, thereby reducing processing time while maintaining computational accuracy through the use of dedicated sensing circuits designed for precise bit-wise operations
Solution Approach 2:
The patent transitions the span mask generation operation from an external processing dimension to an internal memory array dimension. By implementing the generation logic within the memory array's sensing circuitry, the system performs computations in parallel across multiple bits simultaneously, changing the operational dimension from sequential external processing to parallel internal processing, which significantly reduces processing time
2Adaptability or versatility
If data is transferred between memory arrays and processing resources via buses, then operational flexibility is maintained, but power consumption and processing performance degrade
Solution Approach 1:
The patent extracts the span mask generation function from external processing resources and relocates it directly into the memory array's sensing circuitry. This extraction eliminates the need for data transfer over buses for this specific operation, reducing power consumption associated with data movement while maintaining operational flexibility by keeping the memory array self-sufficient for mask generation tasks
Solution Approach 2:
The memory array performs span mask generation autonomously using its own sensing circuitry without requiring external processing resources. This self-service capability allows the memory array to generate span masks internally through parallel bit-wise operations, reducing power consumption by eliminating data transfer operations while maintaining the flexibility to perform both storage and computational functions
3Device complexity
If span mask generation is performed externally, then device complexity is reduced, but processing efficiency and energy usage worsen
Solution Approach 1:
The sensing circuitry within the memory array is designed to perform multiple functions: traditional data sensing/readout operations and span mask generation operations. This multi-functionality allows the same hardware infrastructure to handle both memory access and computational tasks, improving processing efficiency without significantly increasing device complexity as the additional functionality leverages existing circuit components
Data Source
AI summary
Examples of the present disclosure provide apparatuses and methods for span mask generation. An example method comprises creating, using sensing circuitry, a number of bit vectors, wherein each of the number of bit vectors includes a repeating pattern based on a size of the number of bit vectors and a particular mask depth.