Sparse Pier Structures for Stable 3D Memory Array Processing
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Solution Overview
Problem
Features formed from layers of dielectric material in memory devices lack sufficient mechanical support during processing, leading to mechanical instability and poor tolerances, which can result in failure to implement circuit structures.
Innovation Solution
Incorporating pier structures formed from alternating layers of materials into cross-sectional patterns, providing mechanical support by contacting features and forming voids to stabilize cross-sectional patterns and improve consistency in subsequent processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If pier structures are incorporated into cross-sectional patterns, then mechanical support and stability are improved, but device complexity increases
Solution Approach 1:
The structure is divided into discrete pier elements distributed throughout the cross-sectional pattern. These segmented pier structures provide localized mechanical support at critical points rather than requiring a continuous complex framework, thereby improving stability while controlling overall device complexity
Solution Approach 2:
Pier structures serve as intermediary elements between the deposited layers and the underlying substrate. These intermediate features provide mechanical support and stability to the cross-sectional pattern during processing, acting as a mediator that transfers and distributes mechanical loads without requiring direct modification of the entire structure
2Manufacturing precision
If pier structures are used to provide mechanical support, then manufacturing precision is improved, but ease of manufacture deteriorates
Solution Approach 1:
Pier structures are formed in advance during the deposition process before final circuit structure fabrication. This preliminary action establishes the mechanical support framework early, ensuring consistent tolerances and precision in subsequent processing steps without adding complexity to the final manufacturing operations
Solution Approach 2:
The pier structures utilize material parameter changes through alternating layer deposition with different mechanical properties. By controlling the composition and thickness of alternating layers, the piers achieve optimal mechanical support characteristics while maintaining compatibility with existing manufacturing processes
Data Source
AI summary
Methods, systems, and devices for sparse piers for three-dimensional memory arrays are described. A semiconductor device, such as a memory die, may include pier structures formed in contact with features formed from alternating layers of materials deposited over a substrate, which may provide mechanical support for subsequent processing. For example, a memory die may include alternating layers of a first material and a second material, which may be formed into various cross-sectional patterns. In some examples, the alternating layers may be formed into one or more pairs of interleaved comb structures. Pier structures may be formed in contact with the cross sectional patterns to provide mechanical support between instances of the cross-sectional patterns, or between layers of the cross-sectional patterns (e.g., when one or more layers are removed from the cross-sectional patterns), or both.