Spatial Division Atomic Layer Deposition Apparatus
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Solution Overview
Problem
The atomic layer deposition method of time division way has low productivity and struggles with maintaining high-quality thin film deposition, particularly in the context of semiconductor devices where finer patterns and superior step coverage are required.
Innovation Solution
An atomic layer deposition apparatus and method that uses a spatial division approach, where a gas supply module provides source, purge, and reaction gases on different regions of a substrate, and a stage moves the substrate linearly to deposit multiple atomic layers, minimizing gas mixture and allowing for apparatus miniaturization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If atomic layer deposition method of time division way is used, then gas mixture is prevented, but productivity is low
Solution Approach 1:
The process chamber is divided into multiple regions (first region and second region) separated by a partition wall. The source gas is supplied to the first region while the reaction gas is supplied to the second region, allowing spatial separation of gas flows. This segmentation prevents gas mixture while enabling simultaneous supply of both gases, thereby improving productivity without compromising deposition quality.
Solution Approach 2:
The invention transitions from temporal separation (time division) to spatial separation (spatial division) by introducing a partition wall that divides the process chamber into distinct regions. This dimensional change allows both source gas and reaction gas to be supplied simultaneously in different spatial zones, eliminating the time-sequential limitation and enhancing deposition speed.
2Productivity
If spatial division approach is used with multiple gas supply units, then productivity is improved, but device complexity increases
Solution Approach 1:
The partition wall serves multiple functions: it separates the source gas and reaction gas regions, provides support structures for gas supply units, and defines the chamber geometry. By making the partition wall multi-functional, the invention reduces the need for additional separate components, thereby managing device complexity while maintaining spatial division for improved productivity.
3Productivity
If conventional CVD method is used, then productivity is high, but manufacturing precision of fine patterns deteriorates
Solution Approach 1:
The invention supplies source gas to one region and reaction gas to another region separately, allowing precise control of gas distribution across the substrate surface. This local quality control ensures uniform atomic layer deposition across fine patterns while maintaining high productivity, as each region receives the appropriate gas for its specific deposition requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances productivity while ensuring high-quality thin film deposition and miniaturization of the apparatus, preventing gas mixture and allowing for uniform atomic layer formation across the substrate.
Implementation Method 1
injects a gas containing one source material in a process chamber to adsorb the source material on a heated substrate
Implementation Method 2
injects a gas containing another source material in the process chamber to generate chemical reaction between the source materials, and then a product of the chemical reaction is deposited on the substrate surface
Implementation Method 3
a product of the chemical reaction is deposited on the substrate surface
Data Source
AI summary
An atomic layer deposition apparatus is provided. The apparatus includes a gas supply module for simultaneously providing atomic layer deposition gases including a source gas, a purge gas and a reaction gas on different regions of deposition target substrate, and a stage disposed on a side of the gas supply module and configured to move the deposition target substrate in a linear direction. At least 2 layers of the atomic layer are deposited on the deposition target substrate as moving the deposition target substrate in the linear direction along the stage at 1-cycle.