Spatial Atomic Layer Deposition Reactant Pulse Control
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Solution Overview
Problem
In mass production of semiconductors using spatial atomic layer deposition (SALD), it is challenging to completely separate different chemical reactants, leading to undesirable chemical vapor deposition (CVD) and powder accumulation, which affects the quality and performance of the product.
Innovation Solution
The method involves providing a substrate with independent outlets for first and second chemical reactants, and making a relative displacement of the substrate to these outlets, applying at least one of the chemical reactants in a pulse form to reduce unwanted CVD and powder accumulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If spatial atomic layer deposition is used to improve deposition rate, then productivity is improved, but chemical vapor deposition occurs causing powder accumulation
Solution Approach 1:
The patent applies periodic pulsed delivery of chemical reactants instead of continuous flow. The first chemical reactant is delivered in pulses during specific time periods, followed by purge periods, then the second chemical reactant is delivered in pulses. This periodic action prevents simultaneous presence of both reactants, eliminating CVD and powder accumulation while maintaining high deposition rates through efficient use of each reactant pulse.
2Manufacturing precision
If chemical reactants are completely separated to prevent CVD, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent separates chemical reactants in the time dimension rather than requiring complete spatial separation. By delivering reactants in alternating time periods with purge steps, the system achieves effective separation without needing complex spatial isolation structures. This reduces device complexity while maintaining film quality through precise temporal control of reactant delivery.
3Reliability
If machine maintenance is increased to remove powder accumulation, then reliability is improved, but loss of time increases
Solution Approach 1:
The patent prevents powder accumulation from occurring in the first place by using pulsed reactant delivery with purge periods. This preliminary anti-action eliminates the harmful CVD process before powder accumulation can occur, thereby maintaining product quality without requiring frequent maintenance interruptions. The system proactively prevents the problem rather than reactively solving it through maintenance.
4Manufacturing precision
If conventional ALD is used to ensure film quality, then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
The patent maintains continuous useful action by immediately delivering the second chemical reactant after purging the first reactant, without idle time between cycles. The pulsed delivery ensures complete reaction and purging before switching reactants, maintaining film quality, while the continuous alternation of reactant delivery maximizes deposition rate. This eliminates the slow sequential processing of conventional ALD by keeping the system continuously productive.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces powder accumulation and peeling, prolongs machine maintenance intervals, decreases chemical reactant consumption, and improves the quality of the thin film deposited, thereby reducing the overall cost of the machine.
Implementation Method 1
Atomic layer deposition (ALD) technology has the advantages including dense film, high uniformity and high step coverage... a new technique called spatial ALD (SALD) has emerged... implementing thin film deposition by layer-by-layer stacking
Implementation Method 2
reaction cycles are performed in an order of spatial positions, and the substrate or base is subjected to a first chemical reactant and a second chemical reactant respectively in the movement process, so that different chemical reactants or chemical sources are separated in space
Implementation Method 3
it is often difficult to completely separate different chemical reactants, so undesirable chemical vapor deposition (CVD) may occur near the spray holes, in the exhaust tank, or in the chemical source diffusion region
Data Source
AI summary
The present disclosure relates to a method and apparatus for depositing a thin film, and a thin film. According to an embodiment of the present disclosure, a method for depositing a thin film includes: providing a substrate into a reaction chamber, the reaction chamber including one or more first chemical reactant outlets, and one or more second chemical reactant outlets spatially independent of the one or more first chemical reactant outlets; and making a relative displacement of the substrate to the one or more first chemical reactant outlets and the one or more second chemical reactant outlets, where at least one of a first chemical reactant passing through the first chemical reactant outlet and a second chemical reactant passing through the second chemical reactant outlet are applied to the substrate in a pulse form.