Spatial ALD Particle Coating for High-Throughput Conformal Deposition
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Solution Overview
Problem
Current atomic layer deposition (ALD) methods are limited by time-sequenced precursor dosing, which results in low throughput and impracticality for high-volume manufacturing, particularly when coating particles.
Innovation Solution
A continuous spatial ALD process and apparatus that separates precursor dosing in space rather than time, allowing for simultaneous operation of multiple dosing zones and continuous particle movement through a reaction zone, with separate exhaust gas collection and removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If time-sequenced alternate dosing of precursors is used in classic ALD, then conformal coating layers are achieved, but growth rate is limited due to purging and pumping times
Solution Approach 1:
The patent transitions from time-sequenced dosing to spatially-separated dosing zones arranged in a linear array. Multiple precursor dosing zones are positioned at different locations along the particle transport path, allowing simultaneous exposure to different precursors in space rather than sequential exposure in time. This dimensional change from temporal to spatial sequencing eliminates purging requirements while maintaining conformal coating quality.
Solution Approach 2:
The reaction chamber is segmented into multiple spatially-separated dosing zones, each dedicated to a specific precursor. This segmentation allows each zone to operate independently with its own precursor source and flow conditions, enabling simultaneous dosing without cross-contamination. The segmented architecture resolves the contradiction by allowing parallel operations that were previously sequential.
2Reliability
If time-sequenced alternate dosing with purging is used, then CVD reactions are prevented, but throughput is reduced due to pumping time
Solution Approach 1:
The patent extracts the purging function from the dosing sequence by introducing dedicated inert gas flow paths that run continuously through all dosing zones. Instead of periodic purging between dosing steps, inert gas flows continuously to prevent CVD reactions, while precursor dosing occurs simultaneously in spatially-separated zones. This extraction of the purging function from the temporal sequence eliminates the time loss associated with pumping operations.
3Manufacturing precision
If batch ALD processing is used for particle coating, then coating uniformity is maintained, but production volume is limited
Solution Approach 1:
The patent implements continuous particle transport through the array of dosing zones, replacing batch processing with a continuous flow system. Particles move continuously through the reaction chamber, exposing each particle to multiple spatially-separated dosing zones in sequence, achieving both uniform coating and high production volume. The continuous action maintains coating precision while dramatically increasing throughput compared to batch processing.
Solution Approach 2:
The system introduces dynamic particle transport mechanisms that allow continuous movement of particles through the dosing zones. The particle flow rate and residence time in each zone can be dynamically controlled to maintain optimal coating conditions. This dynamic approach enables scaling from batch to continuous operation while preserving coating uniformity through controlled exposure conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-throughput, continuous production of coated particles, suitable for applications such as catalysts, catalyst supports, and advanced composite materials, with improved efficiency and reduced chemical vapor deposition (CVD) reactions.
Implementation Method 1
introducing a precursor gas into contact with the directed particles at each precursor dosing zone, such that the precursor gas reacts at the surface of the directed particles in said precursor dosing zone to form a particulate substrate with an atomic layer deposition
Implementation Method 2
a continuous reactor configured for performing continuous spatial atomic layer deposition or chemical vapor deposition on a particulate substrate
Data Source
AI summary
Continuous spatial atomic layer deposition is performed on a particulate substrate in a continuous reactor comprising a plurality of spatially separated, precursor dosing zones and a means for moving the particulate substrate spatially through the precursor dosing zones to apply an atomic layer deposition coating thereon. The precursor dosing zones may be used simultaneously.