Spatial ALD Chamber Layout for Single-Chamber SADP Throughput

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Solution Overview

Problem

The semiconductor industry faces challenges in efficiently and cost-effectively depositing films on substrates due to the low throughput of atomic layer deposition (ALD) processes, which are necessary for tight process variability and high aspect ratio features, leading to increased costs and system footprints.

Innovation Solution

A substrate processing system with spatial atomic layer deposition (ALD) that uses multiple gas channels separated by inert purging and vacuum pumping to achieve sequential and uniform film deposition and etching, allowing for self-aligned double patterning (SADP) processes to be performed in a single chamber, enhancing throughput and uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If traditional ALD processes are used to deposit films on high aspect ratio features, then manufacturing precision and conformality are improved, but productivity and throughput deteriorate due to very low deposition rates

Engineering Contradiction:

Improvefilm conformalityVSAvoidsubstrate processing throughput

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The patent segments the deposition chamber into multiple independently controlled zones along the substrate surface. Each zone can have different deposition conditions (gas flow rates, temperatures, precursor exposure times), allowing simultaneous optimization for both conformality on high aspect ratio features and overall throughput by processing different regions in parallel

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent transitions from traditional sequential ALD (processing entire substrate uniformly) to spatially parallel ALD where deposition occurs simultaneously across multiple zones. This dimensional expansion from temporal to spatial processing enables maintaining precise conformal coverage while increasing total deposition area per unit time, thus improving throughput without sacrificing manufacturing precision

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Productivity

If multiple chambers are used to increase processing throughput, then productivity is improved, but system footprint and device complexity increase

Engineering Contradiction:

Improveprocessing throughputVSAvoidsystem footprint

Core Design Contradiction:

ProductivityVSArea of stationary object

Solution Approach 1:

The patent merges multiple deposition functions into a single chamber by creating spatially separated zones that can operate simultaneously. This consolidation achieves the throughput of multiple chambers while occupying the footprint of one, reducing overall system size and complexity while maintaining high productivity through parallel processing of different substrate regions

Inventive Principle:

Principle #5Merging (Combining)

3Manufacturing precision

If ALD processes are used for tight process variability requirements, then manufacturing precision is improved, but processing time increases leading to higher cost of ownership

Engineering Contradiction:

Improveprocess variability controlVSAvoidprocessing time

Core Design Contradiction:

Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent enables continuous useful action by allowing multiple zones to deposit simultaneously without requiring sequential processing of each zone. All zones operate in parallel throughout the deposition cycle, eliminating idle time between zone processing while maintaining the precise control needed for low process variability, thus reducing total processing time without sacrificing manufacturing precision

Inventive Principle:

Principle #20Continuity of useful action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The system achieves within-wafer uniformity of <0.5% and deposition conformality of 100% on 3:1 structures, with faster film growth rates and controlled thickness, addressing the inefficiencies of traditional ALD systems.

Implementation Method 1

ALD employs chemisorption to deposit a saturated monolayer of reactive precursor molecules on a substrate surface

Methodology Applied

Scientific EffectChemisorption: Chemisorption

Implementation Method 2

Each injection of a reactive precursor is typically separated by an inert gas purge to provide a new atomic layer to previous deposited layers

Methodology Applied

Scientific EffectGas purging:

Implementation Method 3

Methodology Applied

Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Data Source

PatentUS12431361B2Self-aligned double patterning with spatial atomic layer deposition

Publication Date: 2025.09.30 APPLIED MATERIALS INC

AI summary

Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.