Spatial Light Modulator for LiDAR Beam Steering

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Solution Overview

Problem

Current LiDAR systems face challenges in achieving high reliability and efficient beam steering for advanced driving assistance and autonomous driving applications, as existing beam steering methods are either mechanically complex or lack precision in non-mechanical approaches.

Innovation Solution

A spatial light modulator design featuring a first reflective layer, a cavity layer, and a second reflective layer with lattice structures comprising p-type, intrinsic, and n-type semiconductor layers, where the thickness and doping concentrations of these layers are optimized to control light phase modulation and reflectivity, enabling precise beam steering.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If mechanical beam steering methods are used (rotating light source, rotating mirror, moving spherical lens), then beam steering capability is achieved, but device complexity and reliability are worsened due to mechanical components

Engineering Contradiction:
Improvebeam steering capabilityVSAvoidmechanical structure complexity
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The patent replaces mechanical beam steering components (rotating mirrors, moving lenses) with a non-mechanical spatial light modulator that uses electrically controlled phase modulation. The SLM consists of a semiconductor layer with p-n junctions that can dynamically adjust light phase through electrical signals, eliminating all mechanical moving parts while achieving the same beam steering functionality through optical phase control

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the operating parameter from mechanical position to electrical voltage/current control. By applying different voltages to the p-n junctions in the semiconductor layer, the refractive index and thus the light phase are dynamically adjusted, enabling beam steering through parameter modulation rather than physical movement

Inventive Principle:
Principle #35Parameter changes

2Device complexity

If non-mechanical beam steering methods are used (semiconductor device, reflective phased array), then device complexity is reduced, but measurement precision and beam steering accuracy are worsened

Engineering Contradiction:
Improvestructural simplicityVSAvoidbeam steering accuracy
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The patent applies local quality by creating a spatially varying phase profile across the semiconductor layer. Different regions of the p-n junction structure are doped with different concentrations, and voltages are applied locally to specific pixel elements, enabling precise spatial control of light phase at each position to achieve accurate beam steering without mechanical complexity

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses composite material structure combining p-type and n-type semiconductor layers to form p-n junctions. This composite structure enables electrical control of optical properties through the interaction of different semiconductor materials, achieving both structural simplicity and high precision beam steering through the combined electrical-optical functionality

Inventive Principle:
Principle #40Composite materials

3Power

If semiconductor layers with optimized thickness ratios (8%-16% for p-type and n-type relative to intrinsic layer) are used, then phase modulation efficiency is improved, but manufacturing precision requirements are increased

Engineering Contradiction:
Improvephase modulation efficiencyVSAvoidlayer thickness control
Core Design Contradiction:
PowerVSManufacturing precision

Solution Approach 1:

The patent optimizes the thickness parameters of p-type and n-type semiconductor layers to specific ratios (8%-16% of the intrinsic layer thickness) to achieve maximum phase modulation efficiency. By carefully controlling these dimensional parameters during manufacturing, the device achieves enhanced optical performance while the standardized ratio specification simplifies the manufacturing process through clear target values

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The spatial light modulator enhances the reliability and precision of LiDAR systems by effectively controlling light phase and direction, improving the accuracy of distance, speed, and azimuth measurements in LiDAR applications.

Implementation Method 1

spatial light modulators capable of controlling a phase of emission light

Methodology Applied
Scientific EffectPhase modulation: Phase Modulation

Implementation Method 2

controlling a phase of emission light

Methodology Applied
Scientific EffectRefraction: Refraction

Implementation Method 3

a first reflective layer, a cavity layer provided on the first reflective layer, and a second reflective layer provided on the cavity layer

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS20220171027A1Spatial light modulator, lidar apparatus including the same, and method of manufacturing the spatial light modulator
Publication Date: 2022.06.02 SAMSUNG ELECTRONICS CO LTD
  • US20220171027A1 patent drawing
  • US20220171027A1 patent drawing
  • US20220171027A1 patent drawing

AI summary

Provided is a light modulator including a first reflective layer, a cavity layer provided on the first reflective layer, and a second reflective layer provided on the cavity layer opposite to the first reflective layer, the second reflective layer including a plurality of lattice structures, wherein each lattice structure of the plurality of lattice structures have a pin diode structure and includes a p-type semiconductor layer, an intrinsic semiconductor layer, and an n-type semiconductor layer, and wherein a thickness of the p-type semiconductor layer and a thickness the n-type semiconductor layer are in a range from 8% to 16% of a thickness of the intrinsic semiconductor layer.