SPFS Sensor Chip Gate Mark Positioning for Stable S/N Ratios
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Solution Overview
Problem
Conventional sensor chips for SPFS measurement devices experience significant variations in signal properties, noise, and detection sensitivity due to environmental changes, leading to unstable quantitative measurements and decreased S/N ratios, which hinder precise and accurate SPFS measurements.
Innovation Solution
The SPFS measurement device incorporates a sensor chip with a dielectric member produced by injection molding, where a gate mark is positioned on one side end surface intersecting with the excitation light incoming and reflected light outgoing surfaces, and the center of the ligand immobilization part is located between the 3b/8 and 6b/8 positions from the gate mark, ensuring stable S/N ratios and coefficient of variation, thereby ensuring precise and accurate measurements regardless of environmental conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a sensor chip with a dielectric member made of resin is used for SPFS measurement, then the device can be manufactured with ease and cost-effectiveness, but the quantitative property and measurement stability cannot be ensured due to large variations in signal, noise, and detection sensitivity under environmental changes
Solution Approach 1:
The patent applies parameter changes by optimizing the position of the gate mark on the dielectric member and controlling the thickness of the metal thin film. Specifically, the gate mark is positioned at a specific location relative to the excitation light incoming surface and reflected light outgoing surface, and the metal thin film thickness is controlled within a specific range (10-100 nm). These parameter optimizations enable the sensor chip to maintain stable S/N ratios and detection sensitivity across environmental conditions, resolving the contradiction between ease of manufacture and measurement reliability.
2Adaptability or versatility
If environmental conditions change (temperature variations from -10°C to 50°C, storage in refrigerator or freezer), then the sensor chip can be transported and stored conveniently, but the S/N ratio decreases and measurement precision deteriorates
Solution Approach 1:
The patent applies preliminary action by pre-optimizing the sensor chip structure before environmental exposure. The gate mark is positioned at a specific location and the metal thin film thickness is controlled within a specific range during manufacturing. This preliminary structural optimization ensures that when the sensor chip is subsequently exposed to environmental changes during transport and storage, the S/N ratio and measurement precision remain stable, preventing deterioration rather than reacting to it.
Solution Approach 2:
The patent uses parameter changes by controlling the metal thin film thickness within a specific range (10-100 nm) and positioning the gate mark at a specific location. These parameter optimizations make the sensor chip less sensitive to environmental temperature variations, maintaining stable measurement precision and S/N ratios across different storage and transport conditions.
3Ease of manufacture
If the gate mark is positioned at the bottom part of the dielectric member as in conventional injection molding, then the manufacturing process is simple, but the S/N ratio decreases after environmental exposure and measurement accuracy is compromised
Solution Approach 1:
The patent applies local quality by positioning the gate mark at a specific location on the dielectric member rather than uniformly at the bottom. The gate mark is positioned such that it does not interfere with the optical path between the excitation light incoming surface and the reflected light outgoing surface. This localized optimization of the gate mark position maintains manufacturing simplicity while preventing degradation of the S/N ratio during environmental exposure.
Solution Approach 2:
The patent applies parameter changes by modifying the gate mark position parameter during injection molding. Instead of placing the gate mark at the bottom part as in conventional designs, the patent positions it at a specific location relative to the optical surfaces, with the distance from the excitation light incoming surface and reflected light outgoing surface controlled within specific ranges. This parameter change resolves the contradiction between manufacturing ease and measurement precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration maintains stable S/N ratios and coefficient of variation, enabling highly precise and accurate SPFS measurements across varying environmental conditions by minimizing signal and noise variations, ensuring reliable quantitative analysis.
Implementation Method 1
the evanescent wave generated by incoming of excitation light under the attenuated total reflection (ATR; attenuated total reflectance) conditions is resonated with surface plasmons on the surface of a metal thin film, and thereby, localized electric field, which is enhanced several tens to several hundreds of times, can be formed on the surface of the metal thin film
Implementation Method 2
a fluorescent substance with which a captured analyte is conjugated (labeled) is set in this enhanced localized electric field; the fluorescence of the fluorescent substance is efficiently excited; and, by observing this fluorescence, a very slight amount or a very low concentration of an analyte is detected
Data Source
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AI summary
[Problem] To provide a sensor chip for SPFS measurement, by which, irrespective of environmental conditions, the variation of properties of the signal, the noise, the detection sensitivity and so on is small, and the quantitative property can be ensured, and a highly precise and accurate SPFS measurement can be carried out. [Means for Solution] A sensor chip for SPFS measurement which has a dielectric member constituting a prism, said dielectric member having been produced by carrying out injection molding of a resin, said sensor chip for SPFS measurement having been arranged such that a resin inlet is set on one side end surface of the dielectric member, said one side end surface intersecting with an excitation light incoming surface of the dielectric member, a metal thin film-formed surface of the dielectric member, and a reflected light outgoing surface through which a reflected light goes out; and, when viewing from the metal thin film-formed surface side of the dielectric member and taking as b the distance of the side end surface position of the resin inlet to the position on the metal thin film-formed surface that is farthest from the side end surface position of the resin inlet, the center of a ligand immobilization part, which is a reaction part, is located in the area between the 3b/8 position and the 6b/8 position from the side end surface position of the resin inlet.