Spike Implanted Schottky Diode Barrier Height
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Solution Overview
Problem
Existing Schottky diodes, particularly those used in RFID applications, require a low barrier height to detect small RF signals, but achieving this with conventional metals like Ti, Co, and Ni is costly and inefficient, as they often necessitate the use of different metals for other semiconductor devices, leading to increased costs.
Innovation Solution
A Schottky diode with a conductive path featuring a non-uniform dopant distribution in the spike implant region and a uniform distribution in an adjacent region, utilizing metals like Ti, Co, or Ni for silicide regions, which reduces barrier height and enhances current density without the need for additional costly metals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional metals like Ti, Co, or Ni are used for Schottky diode, then the diode can be integrated with other semiconductor devices using the same method flow, but the barrier height is medium or higher, which is not suitable for applications requiring low barrier height
Solution Approach 1:
The patent applies local quality by creating a non-uniform dopant distribution with a concentrated spike region near the metal-semiconductor interface. This localized modification of dopant concentration in the immediate vicinity of the contact allows the Schottky diode to achieve low barrier height characteristics while the rest of the semiconductor structure maintains compatibility with standard Ti, Co, or Ni metallization processes.
2Reliability
If alternative metals like Pt or Pd are used to achieve very low barrier height, then the diode performance for small RF signal detection is improved, but the manufacturing cost increases significantly
Solution Approach 1:
The patent employs parameter changes by modifying the dopant concentration parameter in the semiconductor substrate. By creating a spike in dopant concentration near the metal-semiconductor interface through ion implantation, the barrier height is reduced to very low levels comparable to Pt or Pd contacts, but using conventional metals, thereby avoiding the high manufacturing costs of alternative metals.
3Reliability
If additional dopant implantation steps are added to reduce barrier height, then the diode performance is improved, but the device complexity and manufacturing process complexity increase
Solution Approach 1:
The patent applies preliminary action by performing the dopant spike implantation before metal deposition in the process sequence. This timing allows the dopant profile to be established in advance, enabling subsequent metal layers to be deposited on a pre-conditioned surface with the desired electrical characteristics, thereby simplifying the overall process integration.
Solution Approach 2:
The patent merges the Schottky diode formation process with the existing semiconductor manufacturing methodology by integrating dopant implantation and metal deposition steps into the standard process flow. This consolidation allows low barrier height Schottky diodes to be produced alongside other semiconductor devices using the same fabrication line without requiring separate specialized processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diode achieves a lower barrier height and higher current density while maintaining cost-effectiveness by using standard metals for silicide regions, reducing reverse bias leakage current and series resistance, making it suitable for RFID applications without the need for alternative, costly metals.
Implementation Method 1
a first semiconductor volume having a non-uniform distribution of ions and a second semiconductor volume having a uniform distribution of ions relative to the first semiconductor volume
Data Source
AI summary
A rectifying diode. The diode comprises a first conductor region and a second conductor region. The diode further comprises a diode conductive path between the first conductor region and the second conductor region. The path comprises a first semiconductor volume having a non-uniform distribution of ions and a second semiconductor volume having a uniform distribution of ions relative to the first semiconductor volume.