Spin-Coated SAM Precursors for Selective DSA Surface Patterning
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Solution Overview
Problem
Current methods for self-assembled monolayer (SAM) deposition on semiconductor and metal substrates are limited by the need for complex processes and materials that do not provide high density and uniformity, leading to residue issues and contamination, and lack selective cleavage capabilities for enhanced lithographic performance.
Innovation Solution
Development of spin-coatable SAM precursors with multi-tether functional groups that form well-defined self-assembled monolayers with high packing density, allowing for selective pinning or guiding of block copolymer wetting and enabling easy selective cleavage on metal substrates, using organic acid solvents with specific pH ranges for chemical grafting and removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional SAM deposition methods are used, then the process is simple, but the SAM density and uniformity are insufficient leading to residue issues and contamination
Solution Approach 1:
The patent modifies the molecular structure of SAM precursors by incorporating multi-tether functional groups (multiple reactive groups per molecule) to enhance packing density and uniformity. This structural parameter change allows conventional spin-coating methods to achieve high-quality SAMs without increasing process complexity
Solution Approach 2:
The patent uses composite molecular structures combining multiple functional groups (e.g., silane, oxide, hydroxyl groups) within single precursor molecules. This composite approach enables high-density SAM formation through spin-coating, resolving the contradiction between simplicity and effectiveness
2Adaptability or versatility
If non-selective SAM deposition is used, then the process is straightforward, but selective cleavage capability is lacking for enhanced lithographic performance
Solution Approach 1:
The patent introduces spatially selective SAM deposition by functionalizing specific regions (e.g., metal patterns vs. dielectric areas) with different SAM precursors. This local differentiation enables selective cleavage in subsequent lithographic steps, enhancing adaptability without significantly increasing overall process complexity
Solution Approach 2:
The patent employs selectively removable SAM layers as intermediary structures that facilitate pattern transfer. These SAM intermediaries can be selectively cleaved to reveal underlying patterns, providing versatile lithographic functionality while maintaining process manageability
3Manufacturing precision
If high-density SAMs are formed, then lithographic performance is improved, but selective deposition and removal capabilities are reduced
Solution Approach 1:
The patent segments the substrate into distinct regions (metal patterns, dielectric areas) and deposits different SAM types on each segment. This segmentation allows high-density SAMs to be formed on metal surfaces for superior lithographic performance while maintaining selective removal capabilities through region-specific chemistry
Solution Approach 2:
The patent inverts the conventional approach by making the SAM layer selectively removable rather than the underlying substrate. High-density SAMs on metal surfaces can be selectively cleaved using specific chemistries, enabling versatile pattern transfer while maintaining high lithographic performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides high-density, uniform SAMs with improved lithographic performance by reducing processing steps and enhancing pattern resolution, while allowing for selective deposition and removal on metal substrates, thus addressing the limitations of existing SAM technologies.
Implementation Method 1
The invention describes synthesis and processing of spin-coat able SAM
Implementation Method 2
structural design with multi-tether functional groups allows spin-coat ability and process conditions allow formation of well-defined SAMs
Implementation Method 3
using organic acid solvents with specific pH ranges for chemical grafting and removal
Data Source
AI summary
The present invention relates to a compound of structure (I), wherein A is a core moiety which is selected from structure (Ia), (Ib), (Ic) and (Id), to which is attached through X, a direct valence bond or a divalent linking group, m number of linear alkylene moieties of chain length n where each said linear alkylene moiety has a terminal B reactive moiety, and further wherein * designates possible attachment point of said linear alkylene moieties in each structure, B is selected from —OH, —CH═CH2, —O—(P═O)(OR)2, —O—(P═O)(OR)Rs, —N3 and —SH, where n ranges from 8 to 12. The invention also pertains to composition comprising these compounds and the use these compositions to form self-assembled monolayers (SAM) the use of these in DSA processing as neutral or directing layers which can be removed selectively from metal substrates.and the remover solution to accomplish this selective removal.