Spin Current Magnetization Element with Perpendicular Field Layer
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Solution Overview
Problem
Existing spin current magnetization rotational elements face challenges in reducing rotational current density and maintaining integration quality, with methods like oxygen content manipulation being difficult to control and prone to unintended magnetization rotations due to external forces, leading to data noise and integration issues.
Innovation Solution
A spin current magnetization rotational element is designed with a spin-orbit torque wiring and a perpendicular magnetic field applying layer, separated from the ferromagnetic layer, to induce magnetization rotation without external magnetic fields, using a configuration that includes a first ferromagnetic layer with easy magnetization axis aligned with the wiring direction and a perpendicular magnetic field applying layer with a magnetic flux component, ensuring efficient magnetization rotation without increased electricity consumption or integration deterioration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxygen content manipulation is used to induce magnetization rotation, then magnetization rotation can be achieved without external magnetic fields, but it is difficult to control the oxygen content and unintended magnetization rotations occur due to external forces
Solution Approach 1:
The patent extracts the magnetic field generation function from the ferromagnetic layer itself and places it in a separate perpendicular magnetic field applying layer. This separation allows the ferromagnetic layer to focus on data storage while the dedicated layer provides controlled magnetic field assistance, eliminating the need for complex oxygen content manipulation mechanisms.
Solution Approach 2:
The perpendicular magnetic field applying layer acts as an intermediary between external control signals and the ferromagnetic layer. It provides a controlled magnetic field that assists magnetization rotation only when needed, preventing unintended rotations caused by external forces while maintaining integration quality.
2Reliability
If a separate external magnetic field generation source is used to assist magnetization rotation, then magnetization rotation can be achieved, but the degree of integration of the integrated circuit deteriorates
Solution Approach 1:
The patent merges the magnetic field applying layer with the magnetoresistance effect element structure, forming an integrated unit. The perpendicular magnetic field applying layer is positioned adjacent to the ferromagnetic layer and connected to the same substrate, providing magnetic field assistance without requiring separate external equipment, thus maintaining high integration quality.
3Productivity
If high rotational current density is applied to achieve magnetization rotation, then magnetization rotation can be achieved efficiently, but the life of the TMR element is reduced
Solution Approach 1:
The perpendicular magnetic field applying layer pre-aligns the magnetization direction of the ferromagnetic layer before the spin current is applied. This preliminary magnetic field assistance reduces the rotational current density required to achieve magnetization rotation, thereby extending the element's operational life while maintaining rotation efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables magnetization rotation with reduced rotational current density and maintains high integration quality by using a self-generated perpendicular magnetic field, allowing for efficient data storage and processing without external magnetic field assistance.
Implementation Method 1
a spin-orbit torque wiring 2, and a first perpendicular magnetic field applying layer 3... a spin current magnetization rotational element 10... generate a spin current
Implementation Method 2
a first perpendicular magnetic field applying layer 3... configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer
Implementation Method 3
A giant magnetoresistance (GMR) element constituted of a multilayer film having a ferromagnetic layer and a nonmagnetic layer
Implementation Method 4
a tunneling magnetoresistance (TMR) element using an insulating layer (tunnel barrier layer, barrier layer) as a nonmagnetic layer
Data Source
AI summary
Provided is a spin current magnetization rotational element including: a spin-orbit torque wiring that extends in a first direction and is configured to generate a spin current; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring and is configured for magnetization direction to be changed; and a first perpendicular magnetic field applying layer that is disposed to be separated from the spin-orbit torque wiring and the first ferromagnetic layer, the first perpendicular magnetic field applying layer being configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer.