Spin-Defect Probes for Contactless RF Field and Temperature Sensing
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Solution Overview
Problem
Current methods for measuring local current flow in RF-IC devices require physical electrical connections, which are cumbersome, costly, and can lead to inaccurate test results and device damage.
Innovation Solution
A non-invasive testing system using a sensing probe with spin defects, such as NV centers, to measure local magnetic fields and temperatures in RF current carrying conductors, where the RF field generated by the current serves as the MW field for spin manipulation without the need for an external antenna.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If physical electrical connections (wire bonds, soldered wires, microprobes) are established with the IC for testing, then electrical current flow can be measured, but the process becomes cumbersome, costly, and may cause device damage or inaccurate results
Solution Approach 1:
The patent replaces the mechanical/electrical contact-based measurement system with an optical detection system. Instead of using wire bonds, soldered wires, or microprobes to establish electrical connections for current measurement, the invention uses optical techniques (such as magneto-optical effects or optical detection of magnetic fields) to measure current flow through the IC device non-invasively. This substitution eliminates the need for physical electrical connections while maintaining measurement capability, thereby reducing device complexity and avoiding associated problems.
Solution Approach 2:
The patent introduces an intermediary medium (such as a magnetic field-sensitive material or optical indicator) that couples the electrical current flow to the optical detection system. This intermediary allows the measurement of electrical current without direct electrical contact by converting the electrical signal into an optical signal that can be detected non-invasively. The intermediary acts as a bridge between the electrical domain and the optical domain, enabling contactless measurement.
2Reliability
If physical electrical connections are made to the IC device, then current flow can be supplied and measured, but defects in connections or device damage may occur
Solution Approach 1:
The patent replaces the mechanical/electrical contact system with an optical detection system that does not require physical connection to the IC device. This substitution eliminates the harmful effects associated with physical connections, such as connection defects, contact resistance, and potential device damage from probe insertion or wire bonding. The optical system can measure current flow through the device without touching it, thereby improving reliability and eliminating damage risks.
Solution Approach 2:
The patent creates an optical copy or representation of the electrical current flow through the device. Instead of directly measuring the electrical current through physical contact, the system generates an optical signal that replicates or mirrors the current flow pattern. This optical copy can be detected and analyzed without affecting the device, thereby improving reliability and eliminating the risk of device damage from physical connections.
3Ease of operation
If conventional optical techniques (OBIRCH, EMMI) are used to detect electrical leakage currents, then measurement can be performed, but spatial resolution is limited to larger than 500 nm
Solution Approach 1:
The patent changes the detection parameter or mechanism to achieve higher spatial resolution. Instead of using conventional optical techniques that detect electrical leakage currents with limited resolution (>500 nm), the invention employs advanced optical detection methods (such as near-field optical microscopy, plasmonic enhancement, or quantum dot-based sensors) that can resolve current flow at the nanometer or sub-nanometer scale. By changing the detection parameter from electrical leakage to a more sensitive optical signal, the spatial resolution is dramatically improved while maintaining ease of operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for reliable, high-resolution measurement of local magnetic fields and temperatures in RF-IC devices without physical contact, reducing complexity, spatial inhomogeneities, and costs, while improving measurement accuracy and enabling early detection of defects in fabrication.
Implementation Method 1
The RF field generated by the RF current flow in the conductive sample structure serves as the MW field required for the manipulation of the spin population of the NV center
Implementation Method 2
The spin defect or the ensemble of spin defects are configured to undergo a Zeeman shift in energy level upon irradiation with excitation light (L) followed by exposure to a magnetic field
Implementation Method 3
The spin defect or the ensemble of spin defects are configured to undergo a shift in zero-field splitting (D) energy level upon irradiation with excitation light (L) followed by exposure to heat
Data Source
AI summary
The disclosure concerns non-invasive measurement of a local AC magnetic field and/or a local temperature in an electrically conductive sample structure. The system includes a sensing probe of a solid-state lattice with one or more spin defects which are tunable by external magnetic and/or electric fields, an RF transmitting antenna configured to emit RF waves, and a microscope configured to determine and/or control the distance between a sensing surface of the sensing probe and a surface of the electrically conductive sample. The RF transmitting antenna is arranged at a distance from the surface of the conductive sample structure for contactless induction of electrical RF current flow in the electrically conductive sample structure. The RF transmitting antenna is further arranged at a distance from the spin defects such that near-field inductive coupling between the RF transmitting antenna and the spin defects are prevented or substantially prevented.